Dirac and Weyl semimetals, such as cadmium arsenide (CdAs), have recently attracted attention for use in high-speed photodetectors that operate at longer infrared wavelengths, where conventional semiconductor-based photodetectors have a limited performance. In this Letter, we explore near-infrared (960 nm) photodetection in a CdAs/AlSb heterojunction. We show that CdAs/AlSb heterojunctions allow for an unbiased operation and demonstrate an enhanced responsivity and quantum efficiency compared to AlSb and CdAs reference devices.
View Article and Find Full Text PDFEpitaxial heterostructures with topological insulators enable novel quantum phases and practical device applications. Their topological electronic states are sensitive to the microscopic parameters, including structural inversion asymmetry (SIA), which is an inherent feature of many real heterostructures. Controlling SIA is challenging, because it requires the ability to tune the displacement field across the topological film.
View Article and Find Full Text PDFTopological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. This work systematically examines thermoelectric transport in a series of topological Dirac semimetal CdAs thin films grown by molecular beam epitaxy.
View Article and Find Full Text PDFWe experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd_{3}As_{2}, driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted by the terahertz electric field.
View Article and Find Full Text PDFWe report a topological phase transition in quantum-confined cadmium arsenide (Cd_{3}As_{2}) thin films under an in-plane Zeeman field when the Fermi level is tuned into the topological gap via an electric field. Symmetry considerations in this case predict the appearance of a two-dimensional Weyl semimetal (2D WSM), with a pair of Weyl nodes of opposite chirality at charge neutrality that are protected by space-time inversion (C_{2}T) symmetry. We show that the 2D WSM phase displays unique transport signatures, including saturated resistivities on the order of h/e^{2} that persist over a range of in-plane magnetic fields.
View Article and Find Full Text PDFCadmium arsenide (CdAs) thin films feature a two-dimensional topological insulator (2D TI) phase for certain thicknesses, which theoretically hosts a set of counterpropagating helical edge states that are characteristic of a quantum spin Hall (QSH) insulator. In devices containing electrostatically defined junctions and for magnetic fields below a critical value, chiral edge modes of the quantum Hall effect can coexist with QSH-like edge modes. In this work, we use a quantum point contact (QPC) device to characterize edge modes in the 2D TI phase of CdAs and to understand how they can be controllably transmitted, which is important for use in future quantum interference devices.
View Article and Find Full Text PDFTwo-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional TIs by reducing the film thickness until the surface states hybridize. Here, we employ this technique to report the first observation of a 2D TI state in epitaxial thin films of cadmium arsenide, a prototype Dirac semimetal in bulk form.
View Article and Find Full Text PDFUsing broadband (12-45 THz) multi-terahertz spectroscopy, we show that stimulated Rayleigh scattering dominates the transient optical conductivity of cadmium arsenide, a Dirac semimetal, under an optical driving field at 30 THz. The characteristic dispersive line shape with net optical gain is accounted for by optical transitions between light-induced Floquet subbands, strikingly enhanced by the longitudinal plasma mode. Stimulated Rayleigh scattering with an unprecedentedly large refractive index change may pave the way for slow light generation in conductive solids at room temperature.
View Article and Find Full Text PDFA bulk crystal of cadmium arsenide is a three-dimensional Dirac semimetal, but, in a thin film, it can behave like a three-dimensional topological insulator. This tunability provides unique opportunities to manipulate and explore a topological insulator phase. However, an obstacle to engineering such tunability is the subtlety of transport-based discriminants for topological phases.
View Article and Find Full Text PDFThe electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynamics in thin films of a photoexcited Dirac semimetal CdAs by probing the broadband response functions as complex quantities in the multiterahertz region (10-45 THz, 40-180 meV, or 7-30 μm), which covers the crossover between the inter- and intraband response.
View Article and Find Full Text PDFWe report on the evolution of the average and depth-dependent magnetic order in thin-film samples of biaxially stressed and electron-doped EuTiO for samples across a doping range < 0.1 to 7.8 × 10 cm.
View Article and Find Full Text PDFThe linear band crossings of 3D Dirac and Weyl semimetals are characterized by a charge chirality, the parallel or antiparallel locking of electron spin to its momentum. These materials are believed to exhibit an E · B chiral magnetic effect that is associated with the near conservation of chiral charge. Here, we use magneto-terahertz spectroscopy to study epitaxial CdAs films and extract their conductivities σ(ω) as a function of E · B.
View Article and Find Full Text PDFAs the need for ever greater transistor density increases, the commensurate decrease in device size approaches the atomic limit, leading to increased energy loss and leakage currents, reducing energy efficiencies. Alternative state variables, such as electronic spin rather than electronic charge, have the potential to enable more energy-efficient and higher performance devices. These spintronic devices require materials capable of efficiently harnessing the electron spin.
View Article and Find Full Text PDFSrTiO_{3} is an incipient ferroelectric that is believed to exhibit a prototype displacive, soft mode ferroelectric transition when subjected to mechanical stress or alloying. We use high-angle annular dark-field imaging in scanning transmission electron microscopy to reveal local polar regions in the room-temperature, paraelectric phase of strained SrTiO_{3} films, which undergo a ferroelectric transition at low temperatures. These films contain nanometer-sized domains in which the Ti columns are displaced.
View Article and Find Full Text PDFSilicone can present a challenge during the development of a biologics drug product particularly in pre-filled syringe (PFS). Due to silicone related challenges, substantial changes in components and manufacturing of the PFS are being sought. Cross-linking of the silicone being one of them, can help reduce mobilization of the silicone into drug product whilst retaining its functionality of lubrication during injection.
View Article and Find Full Text PDFThe mechanisms by which itinerant carriers compete with polar crystal distortions are a key unresolved issue for polar superconductors, which offer new routes to unconventional Cooper pairing. Strained, doped SrTiO films undergo successive ferroelectric and superconducting transitions, making them ideal candidates to elucidate the nature of this competition. Here, we reveal these interactions using scanning transmission electron microscopy studies of the evolution of polar nanodomains as a function of doping.
View Article and Find Full Text PDFWe report strong terahertz (∼10^{12} Hz) high harmonic generation at room temperature in thin films of Cd_{3}As_{2}, a three-dimensional Dirac semimetal. Third harmonics are detectable with a tabletop light source and can be as strong as 100 V/cm by applying a fundamental field of 6.5 kV/cm inside the film, demonstrating an unprecedented efficiency for terahertz frequency conversion.
View Article and Find Full Text PDFThe emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, [Formula: see text], is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy.
View Article and Find Full Text PDFThe nature of superconductivity in SrTiO, the first oxide superconductor to be discovered, remains a subject of intense debate several decades after its discovery. SrTiO is also an incipient ferroelectric, and several recent theoretical studies have suggested that the two properties may be linked. To investigate whether such a connection exists, we grew strained, epitaxial SrTiO films, which are known to undergo a ferroelectric transition.
View Article and Find Full Text PDFUnderstanding the anomalous transport properties of strongly correlated materials is one of the most formidable challenges in condensed matter physics. For example, one encounters metal-insulator transitions, deviations from Landau Fermi liquid behavior, longitudinal and Hall scattering rate separation, a pseudogap phase, and bad metal behavior. These properties have been studied extensively in bulk materials, such as the unconventional superconductors and heavy fermion systems.
View Article and Find Full Text PDFThe magnetotransport properties of epitaxial films of Cd_{3}As_{2}, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect.
View Article and Find Full Text PDFThe lattice response of a prototype Mott insulator, SmTiO_{3}, to hole doping is investigated with atomic-scale spatial resolution. SmTiO_{3} films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO_{3}-type distortions are investigated using an atomic resolution scanning transmission electron microscopy technique that can resolve small lattice distortions with picometer precision.
View Article and Find Full Text PDFWe report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO/SrTiO/SmTiO quantum well structures, which were grown by molecular beam epitaxy on (001) DyScO. We compare their transport properties with those of similar structures grown on LSAT [(LaSr)(AlTa)O]. On DyScO, planar defects normal to the quantum wells lead to a strong in-plane anisotropy in the transport properties.
View Article and Find Full Text PDFWe report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO_{3}/SrTiO_{3} interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more than an order of magnitude. The temperature of the transition systematically depends on the carrier density, which is tuned from ∼1×10^{14} to 3×10^{14} cm^{-2} by changing the SmTiO_{3} thickness.
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