Removal and Reoccurrence of LLZTO Surface Contaminants under Glovebox Conditions.

The reactivity of LiLaZrTaO (LLZTO) solid electrolytes to form lithio-phobic species such as LiCO on their surface when exposed to trace amounts of HO and CO limits the progress of LLZTO-based solid-state batteries. Various treatments, such as annealing LLZTO within a glovebox or acid etching, aim at removing the surface contaminants, but a comprehensive understanding of the evolving LLZTO surface chemistry during and after these treatments is lacking. Here, glovebox-like HO and CO conditions were recreated in a near ambient pressure X-ray photoelectron spectroscopy chamber to analyze the LLZTO surface under realistic conditions.

On the Relative Importance of Li Bulk Diffusivity and Interface Morphology in Determining the Stripped Capacity of Metallic Anodes in Solid-State Batteries.

Lithium metal self-diffusion is too slow to sustain large current densities at the interface with a solid electrolyte, and the resulting formation of voids on stripping is a major limiting factor for the power density of solid-state cells. The enhanced morphological stability of some lithium alloy electrodes has prompted questions on the role of lithium diffusivity in these materials. Here, the lithium diffusivity in Li-Mg alloys is investigated by an isotope tracer method, revealing that the presence of magnesium slows down the diffusion of lithium.

Nanoscale Stoichiometric Analysis of a High-Temperature Superconductor by Atom Probe Tomography.

The functional properties of the high-temperature superconductor Y1Ba2Cu3O7-δ (Y-123) are closely correlated to the exact stoichiometry and oxygen content. Exceeding the critical value of 1 oxygen vacancy for every five unit cells (δ>0.2, which translates to a 1.

Large single crystals of graphene on melted copper using chemical vapor deposition.

A simple method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapor deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum or tungsten support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced within a continuous film.