Management of Surgically Accessible Lymph Nodes Beyond Normal Resection Planes.

This article discusses the management of isolated metastatic lymph nodes for colon and rectal cancer. There are traditionally significant differences in how certain regions of lymph nodes for colon and rectal cancer are managed in the East and West. This has led to the development of the lateral lymph node dissection for rectal cancer and extended lymphadenectomy techniques for colon cancer.

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM.

We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin probe microscopy (SKPM). The NWs were grown using Ga-assisted molecular beam epitaxy with a GaTe captive source as the dopant cell. Te-incorporation in the NWs was associated with a positive shift in the binding energy of the 3d shells of the core constituent elements in doped NWs in the XPS spectra, a lowering of the work function in doped NWs relative to undoped ones from UPS spectra, a significantly higher photoresponse in C-AFM and an increase in surface potential of doped NWs observed in SKPM relative to undoped ones.

Study of patterned GaAsSbN nanowires using sigmoidal model.

This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200-1200 nm has been demonstrated.

Corrigendum: Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in-situ annealing in ultra-high vacuum (2020 Nanotechnology 31 025205).

In this work, the first observation of the space charge limited conduction mechanism (SCLC) in GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxial technique, and the effect of ultrahigh vacuum in-situ annealing have been investigated. The low onset voltage of the SCLC in the NW configuration has been advantageously exploited to extract trap density and trap distribution in the bandgap of this material system, using simple temperature dependent current-voltage measurements in both the ensemble and single nanowires. In-situ annealing in an ultra-high vacuum revealed significant reduction in the trap density from 1016 cm-3 in as-grown NWs to a low level of 7 * 1014 cm-3 and confining wider trap distribution to a single trap depth at 0.

Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum.

In this work, the first observation of the space charge limited conduction mechanism (SCLC) in GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxial technique, and the effect of ultra-high vacuum in situ annealing have been investigated. The low onset voltage of the SCLC in the NW configuration has been advantageously exploited to extract trap density and trap distribution in the bandgap of this material system, using simple temperature dependent current-voltage measurements in both the ensemble and single nanowires. In situ annealing in ultra-high vacuum revealed significant reduction in the trap density from 10 cm in as-grown NWs to a low level of 7 × 10 cm and confining wider trap distribution to a single trap depth at 0.

Molecular beam epitaxial growth of GaAsSb/GaAsSbN/GaAlAs core-multishell nanowires for near-infrared applications.

We report on the bandgap engineering of the GaAsSb/GaAsSbN heterostructured nanowires (NWs) in the core-shell architecture using the unique properties of dilute nitride material system for near-infrared photodetection. A high density of vertical GaAsSb/GaAsSb(N)/GaAlAs core-multishell configured NWs with well faceted, smooth surface morphology has been grown on Si (111) substrates using Ga-assisted molecular beam epitaxy. A low Sb content GaAsSb core has been shown to enable the coherently strained growth of dilute nitride shell with higher Sb content in GaAsSbN shell NWs.

Enteritis after Total Abdominal Colectomy for Ulcerative Colitis.

Introduction: Isolated small bowel enteritis is a rare condition with significant morbidity and mortality.

Presentation Of Case: An 83-year-old female with refractory ulcerative colitis underwent a total proctocolectomy and end ileostomy. Her postoperative course was complicated with return to the operating room for repair of an incarcerated port site hernia.

Epidemiology and Pathophysiology of Diverticular Disease.

Colonic diverticular disease is a common health care issue which has historically been attributed to western countries and older age population. Recent studies have shown a rise in incidence among developing countries that have adopted western diets as well as rise in prevalence among younger patients. In this article, the authors discuss the incidence, epidemiology, and pathophysiology of colonic diverticular disease.

Anorectal melanoma.

Anorectal melanoma is a disease that can be difficult to diagnose because of its unclear presentation. After diagnosis, the main treatment available is surgical resection. Sentinel lymph node mapping has an unclear role in its management.