Multistep In Situ Porosification of N-Polar InGaN with Reduced Hillock Density to Achieve Strain-Relaxed InGaN Pseudosubstrates while Maintaining Miscut Steps.

An up to 40% relaxed N-polar InGaN pseudosubstrate was obtained by a multistep in situ porosification technique on the N-polar GaN template using the metal-organic chemical vapor deposition (MOCVD) method. An InGaN/InGaN/GaN superlattice (SL) layer (SL) with a higher composition of InGaN ( = 15.2%) compared to InGaN ( = 8.