The effect of thai glutinous rice starch on the synthesis of lead zirconate (PbZrO3) nanofibers via the electrospinning method.

This study synthesized blended lead zirconate (PbZrO3;PZ)/poly(ethylene oxide)(PEO)/Glutinous rice starch (GRS) nanofibers by the electrospinning method. A number of parameters such as the ratio between PEO and GRS and calcination temperature have been studied. The as-spun PZ/PEO/GRS composite and PZ fibers were characterized by TG-DTA, X-ray diffraction, FT-IR and SEM, respectively.

Photodetector performance enhancement using an electron accelerator controlled by light.

A new method of photodetector performance enhancement using an embedded optical accelerator circuit within the photodetector is proposed. The principle of optical tweezer generation using a light pulse within a PANDA ring is also reviewed. By using a modified add-drop optical filter known as a PANDA microring resonator, which is embedded within the photodetector circuit, the device performance can be improved by using an electron injection technique, in which electrons can be trapped by optical tweezers generated by a PANDA ring resonator.

Novel design of solar cell efficiency improvement using an embedded electron accelerator on-chip.

In this paper, we propose a novel design of an electron accelerator on-chip by using a small scale device known as a PANDA microring resonator, which can be embedded within the solar cell device, where the trapped electron can be accelerated and moved faster to the final destination. Therefore, the solar cell efficiency can be improved. In principle, a PANDA microring can generate the optical tweezers for hole tapping and transportation.

Application of nanoporous silicon for a metal-semiconductor-metal visible light photodetector.

In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 microm.