Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia-Zirconia Ferroelectric Nanocapacitor.

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/HfZrO (HZO)/W ferroelectric capacitor using multimodal electron microscopy.

Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration.

We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal semiconductor for power electronics. Moreover, 4H-SiC is an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking.

Nanosecond Structural Dynamics during Electrical Melting of Charge Density Waves in 1T-TaS_{2}.

Electrical control of charge density waves has been of immense interest, as the strong underlying electron-lattice interactions potentially open new, efficient pathways for manipulating their ordering and, consequently, their electronic properties. However, the transition mechanisms are often unclear as electric field, current, carrier injection, heat, and strain can all contribute and play varying roles across length scales and timescales. Here, we provide insight on how electrical stimulation melts the room temperature charge density wave order in 1T-TaS_{2} by visualizing the atomic and mesoscopic structural dynamics from quasi-static to nanosecond pulsed melting.

Nanocavity-Mediated Purcell Enhancement of Er in TiO Thin Films Grown via Atomic Layer Deposition.

The use of trivalent erbium (Er), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics.

Integration of silicon chip microstructures for in-line microbial cell lysis in soft microfluidics.

The paper presents fabrication methodologies that integrate silicon components into soft microfluidic devices to perform microbial cell lysis for biological applications. The integration methodology consists of a silicon chip that is fabricated with microstructure arrays and embedded in a microfluidic device, which is driven by piezoelectric actuation to perform cell lysis by physically breaking microbial cell walls micromechanical impaction. We present different silicon microarray geometries, their fabrication techniques, integration of said micropatterned silicon impactor chips into microfluidic devices, and device operation and testing on synthetic microbeads and two yeast species ( and ) to evaluate their efficacy.

Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective.

Deep learning has become ubiquitous, touching daily lives across the globe. Today, traditional computer architectures are stressed to their limits in efficiently executing the growing complexity of data and models. Compute-in-memory (CIM) can potentially play an important role in developing efficient hardware solutions that reduce data movement from compute-unit to memory, known as the von Neumann bottleneck.

Porous but Mechanically Robust All-Inorganic Antireflective Coatings Synthesized using Polymers of Intrinsic Microporosity.

Here, we introduce polymer of intrinsic microporosity 1 (PIM-1) to design single-layer and multilayered all-inorganic antireflective coatings (ARCs) with excellent mechanical properties. Using PIM-1 as a template in sequential infiltration synthesis (SIS), we can fabricate highly uniform, mechanically stable conformal coatings of AlO with porosities of ∼50% and a refractive index of 1.41 compared to 1.

Purcell Enhancement of Erbium Ions in TiO on Silicon Nanocavities.

Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects, such as erbium, suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Moreover, many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices.

A Wireless Underground Sensor Network Field Pilot for Agriculture and Ecology: Soil Moisture Mapping Using Signal Attenuation.

Wireless Underground Sensor Networks (WUSNs) that collect geospatial in situ sensor data are a backbone of internet-of-things (IoT) applications for agriculture and terrestrial ecology. In this paper, we first show how WUSNs can operate reliably under field conditions year-round and at the same time be used for determining and mapping soil conditions from the buried sensor nodes. We demonstrate the design and deployment of a 23-node WUSN installed at an agricultural field site that covers an area with a 530 m radius.

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch.

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor.

Entrepreneurial Talent Building for 21st Century Agricultural Innovation.

Agricultural innovation is a key component of the global economy and enhances food security, health, and nutrition. Current innovation efforts focus mainly on supporting the transition to sustainable food systems, which is expected to harness technological advances across a range of fields. In this Nano Focus, we discuss how such efforts would benefit from not only supporting farmer participation in deciding transition pathways but also in fostering the interdisciplinary training and development of entrepreneurial-minded farmers, whom we term "AgTech Pioneers", to participate in cross-sector agricultural innovation ecosystems as cocreators and informed users of developing and future technologies.

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis.

Resistance switching in metal-insulator-metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. In this work, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices.

Aerosol Filtration Efficiency of Common Fabrics Used in Respiratory Cloth Masks.

The emergence of a pandemic affecting the respiratory system can result in a significant demand for face masks. This includes the use of cloth masks by large sections of the public, as can be seen during the current global spread of COVID-19. However, there is limited knowledge available on the performance of various commonly available fabrics used in cloth masks.

Vanadium Dioxide Circuits Emulate Neurological Disorders.

Information in the central nervous system (CNS) is conducted via electrical signals known as action potentials and is encoded in time. Several neurological disorders including depression, Attention Deficit Hyperactivity Disorder (ADHD), originate in faulty brain signaling frequencies. Here, we present a Hodgkin-Huxley model analog for a strongly correlated VO artificial neuron system that undergoes an electrically-driven insulator-metal transition.

Sequential Infiltration Synthesis for the Design of Low Refractive Index Surface Coatings with Controllable Thickness.

Control over refractive index and thickness of surface coatings is central to the design of low refraction films used in applications ranging from optical computing to antireflective coatings. Here, we introduce gas-phase sequential infiltration synthesis (SIS) as a robust, powerful, and efficient approach to deposit conformal coatings with very low refractive indices. We demonstrate that the refractive indices of inorganic coatings can be efficiently tuned by the number of cycles used in the SIS process, composition, and selective swelling of the of the polymer template.

Wire textured, multi-crystalline Si solar cells created using self-assembled masks.

We have developed an inexpensive and scalable method to create wire textures on multi-crystalline Si solar cell surfaces for enhanced light trapping. The wires are created by reactive ion etching, using a monolayer high self-assembled array of polymer microspheres as an etch mask. Chemical functionalization of the microspheres and the Si surface allows the mask to be assembled by simple dispensing, without spin or squeegee based techniques.

Photocurrent induced by nonradiative energy transfer from nanocrystal quantum dots to adjacent silicon nanowire conducting channels: toward a new solar cell paradigm.

We report the observation of photocurrent in silicon nanowires induced by nonradiative resonant energy transfer (NRET) from adjacent layers of lead sulfide nanocrystal quantum dots using time-resolved photocurrent measurements. This demonstration supports the feasibility of a new solar cell paradigm (Lu, S.; Madhukar, A.

Growth system, structure, and doping of aluminum-seeded epitaxial silicon nanowires.

We have examined the formation of silicon nanowires grown by self-assembly from Si substrates with thin aluminum films. Postgrowth and in situ investigations using various Al deposition and annealing conditions suggest that nanowire growth takes place with a supercooled liquid droplet (i.e.

Microstructural effects on electrical conductivity relaxation in nanoscale ceria thin films.

Microstructure evolution and electrical conductivity relaxation kinetics in highly textured and nanocrystalline dense ceria thin films (approximately 65 nm) are reported in this paper. Highly textured films were grown on sapphire c-plane substrates by molecular beam synthesis (MBS) with orientation relationship (111)CeO(2)parallel(0001)Al(2)O(3) and [110]CeO(2)parallel[1210]Al(2)O(3). No significant structural changes were observed in highly textured films even after extensive annealing at high temperature.

Measurement of carrier mobility in silicon nanowires.

We report the first direct capacitance measurements of silicon nanowires (SiNWs) and the consequent determination of field carrier mobilities in undoped-channel SiNW field-effect transistors (FETs) at room temperature. We employ a two-FET method for accurate extraction of the intrinsic channel resistance and intrinsic channel capacitance of the SiNWs. The devices used in this study were fabricated using a top-down method to create SiNW FETs with up to 1000 wires in parallel for increasing the raw capacitance while maintaining excellent control on device dimensions and series resistance.

Oxygen vacancies in high dielectric constant oxide-semiconductor films.

We provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in metal-ultrathin oxide-semiconductor heterostructures, calculating its effect upon the band bending and interfacial oxidation rates and showing good experimental agreement with the predictions.

Realization of a linear germanium nanowire p-n junction.

Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p-n junction.