Self-Assembled Monolayer-Functionalized NiO Hole Injection layer for Improved Charge Injection in Quantum Dot Light-Emitting Diodes.

The development of quantum dot light-emitting diodes (QLEDs) represents a promising advancement in next-generation display technology. However, there are challenges, especially in achieving efficient hole injection, maintaining charge balance, and replacing low-stability organic materials such as PEDOT:PSS. To address these issues, in this study, self-assembled monolayers (SAMs) were employed to modify the surface properties of NiO, a hole injection material, within the structure of ITO/HIL/TFB/QDs/ZnMgO/Al QLEDs.