A g/I-Based Low-Power LNA for Ka-Band Applications.

This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA achieves a very low power consumption of only 1.98 mW andis the first time the gm/ID approach is applied at such a high frequency.

A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner.

In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details on the architecture definition and design process to maximize delivered power are provided along with stability and thermal analyses.

A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications.

A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC's 100 nm GaN-on-Si technology (D01GH). After a theoretical analysis, the design and layout of both circuits are presented.

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications.

A 1.4-dB Noise Figure (NF) four-stage K-band Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) in UMS 100 nm GaAs pHEMT technology is presented. The proposed circuit is designed to cover the 5G New Release n258 frequency band (24.

Miniature Wide-Band Noise-Canceling CMOS LNA.

In this paper, a wide-band noise-canceling (NC) current conveyor (CC)-based CMOS low-noise amplifier (LNA) is presented. The circuit employs a CC-based approach to obtain wide-band input matching without the need for bulky inductances, allowing broadband performance with a very small area used. The NC technique is applied by subtracting the input transistor’s noise contribution to the output and achieves a noise figure (NF) reduction from 4.

Area-Efficient Integrated Current-Reuse Feedback Amplifier for Wake-Up Receivers in Wireless Sensor Network Applications.

Wireless sensor network (WSN) applications are under extensive research and development due to the need to interconnect devices with each other. To reduce latency while keeping very low power consumption, the implementation of a wake-up receiver (WuR) is of particular interest. In WuR implementations, meeting high performance metrics is a design challenge, and the obtention of high-sensitivity, high data rate, low-power-consumption WuRs is not a straightforward procedure.

A New Current-Shaping Technique Based on a Feedback Injection Mechanism to Reduce VCO Phase Noise.

Inductor-capacitor voltage controlled oscillators (LC-VCOs) are the most common type of oscillator used in sensors systems, such as transceivers for wireless sensor networks (WSNs), VCO-based reading circuits, VCO-based radar sensors, etc. This work presents a technique to reduce the LC-VCOs phase noise using a new current-shaping method based on a feedback injection mechanism with only two additional transistors. This technique consists of keeping the negative resistance seen from LC tank constant throughout the oscillation cycle, achieving a significant phase noise reduction with a very low area increase.

Low-Power RFED Wake-Up Receiver Design for Low-Cost Wireless Sensor Network Applications.

The development of wake-up receivers (WuR) has recently received a lot of interest from both academia and industry researchers, primarily because of their major impact on the improvement of the performance of wireless sensor networks (WSNs). In this paper, we present the development of three different radiofrequency envelope detection (RFED) based WuRs operating at the 868 MHz industrial, scientific and medical (ISM) band. These circuits can find application in densely populated WSNs, which are fundamental components of Internet-of-Things (IoT) or Internet-of-Everything (IoE) applications.