Regulated Phase Separation in Al-Ti-Cu-Co Alloys through Spark Plasma Sintering Process.

With the goal of developing lightweight Al-Ti-containing multicomponent alloys with excellent mechanical strength, an Al-Ti-Cu-Co alloy with a phase-separated microstructure was prepared. The granulometry of metal particles was reduced using planetary ball milling. The particle size of the metal powders decreased as the ball milling time increased from 5, 7, to 15 h (i.

Biodistribution Analysis of Peptide-Coated Magnetic Iron Nanoparticles: A Simple and Quantitative Method.

Biodistribution tracks compounds or molecules of interest in vivo to understand a compound's anticipated efficacy and safety. Nanoparticles deliver nucleic acid and drug payloads and enhance tumor permeability due to multiple properties such as high surface area to volume ratio, surface functionalization, and modifications. Studying the in vivo biodistribution of nanoparticles documents the effectiveness and safety of nanoparticles and facilitates a more application-driven approach for nanoparticle development that allows for more successful translation into clinical use.

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO Electrolyte Gate Insulator.

Artificial synapses with ideal functionalities are essential in hardware neural networks to allow for energy-efficient analog computing. Electrolyte-gated transistors (EGTs) are promising candidates for artificial synaptic devices due to their low voltage operations supported by large specific capacitances of electrolyte gate insulators (EGIs). We investigated the synapse transistor employing an In-Ga-Zn-O channel and a Li-doped ZrO (LZO) EGI so as to improve the short-term plasticity (STP) and long-term potentiation (LTP).

Targeting FLT3-TAZ signaling to suppress drug resistance in blast phase chronic myeloid leukemia.

Background: Although the development of BCR::ABL1 tyrosine kinase inhibitors (TKIs) rendered chronic myeloid leukemia (CML) a manageable condition, acquisition of drug resistance during blast phase (BP) progression remains a critical challenge. Here, we reposition FLT3, one of the most frequently mutated drivers of acute myeloid leukemia (AML), as a prognostic marker and therapeutic target of BP-CML.

Methods: We generated FLT3 expressing BCR::ABL1 TKI-resistant CML cells and enrolled phase-specific CML patient cohort to obtain unpaired and paired serial specimens and verify the role of FLT3 signaling in BP-CML patients.

Thermal stress-assisted formation of submicron pillars from a thin film of CoCrCuFeNi high entropy alloy: experiments and simulations.

In this work, for the first time, the thermal stress-assisted formation of submicron pillars (SPs) from a high entropy alloy (HEA) thin film is made possible, and novel molecular dynamics (MD) simulations are proposed to assess the underlying mechanisms. In a series of experiments, the growth of quasi-equiatomic HEA SPs from CoCrCuFeNi HEA thin films was demonstrated under different heating and cooling conditions. Atomistic simulations are performed to probe possible formation mechanisms in two ways.

Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration.

Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However, the VTFTs have suffered from the back-channel effects induced by the pattering process of vertical sidewalls, which critically deteriorate the device reliability. Therefore, to reduce the detrimental back-channel effects has been one of the most urgent issues for enhancing the device performance of VTFTs.

Polarity Nano-Mapping of Polymer Film Using Spectrally Resolved Super-Resolution Imaging.

With the rapid development of the nanofabrication of polymer materials, the local measurement of the chemical properties of polymer nanostructures has become crucial because they can be highly heterogeneous at the nanoscale. We developed a spectroscopic imaging approach to characterize the nanoscale local polarity of polymer films via spectrally resolved super-resolution microscopy. We demonstrate the capability of the recently developed single-molecule sensing and imaging method to probe the polarity of polymers either inside a polymer matrix or on the external surface of a polymer.

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths.

Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.

Efficiency Enhancement of Electro-Adsorption Desalination Using Iron Oxide Nanoparticle-Incorporated Activated Carbon Nanocomposite.

Capacitive deionization (CDI) technology is currently considered a potential candidate for brackish water desalination. In this study, we designed iron oxide nanoparticle-incorporated activated carbon (AC/FeO) via a facile and cost-effective hydrothermal process. The as-synthesized material was characterized using several techniques and tested as electrodes in CDI applications.

A Personalized 3D-Printed Model for Obtaining Informed Consent Process for Thyroid Surgery: A Randomized Clinical Study Using a Deep Learning Approach with Mesh-Type 3D Modeling.

The aim of this study was to evaluate the usefulness of a personalized 3D-printed thyroid model that characterizes a patient's individual thyroid lesion. The randomized controlled prospective clinical trial (KCT0005069) was designed. Fifty-three of these patients undergoing thyroid surgery were randomly assigned to two groups: with or without a 3D-printed model of their thyroid lesion when obtaining informed consent.

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfOgate insulator.

We fabricated vertical channel thin film transistors (VTFTs) with a channel length of 130 nm using an ALD In-Ga-Zn-O (IGZO) active channel and high-k HfOgate insulator layers. Solution-processed SiOthin film, which exhibited an etch selectivity as high as 4.2 to drain electrode of indium-tin oxide, was introduced as a spacer material.

Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO thin films prepared by atomic layer deposition.

Ferroelectric field-effect transistors (FETs) with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gate stack were fabricated and characterized to elucidate the key process parameters and to optimize the process conditions for guaranteeing nonvolatile memory operations of the device when the undoped HfO was employed as ferroelectric gate insulator. The impacts of top gate (TG) for the MFM part on the memory operations of the MFMIS-FETs were intensively investigated when the TG was chosen as metal Pt or oxide ITO electrode. The ferroelectric memory window of the MFMIS-FETs with ITO/HfO/TiN/SiO/Si gate stack increased to 3.

Ferroelectric Switching in Trilayer AlO/HfZrO/AlO Structure.

Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depends on the specific application, so the process constraints required for device fabrication may be different. In this study, we investigate the ferroelectric characteristics of Zr doped HfO layers treated at high temperatures.

Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions.

Vertical-channel charge-trap memory thin film-transistors (V-CTM TFTs) using oxide semiconductors were fabricated and characterized, in which In-Ga-Zn-O (IGZO) channels were prepared by sputtering and atomic-layer deposition (ALD) methods to elucidate the effects of deposition process. The vertical-channel gate stack of the fabricated device was verified to be well implemented on the vertical sidewall of the spacer patterns due to excellent step-coverage and self-limiting mechanisms of ALD process. The V-CTM TFTs using ALD-IGZO channel exhibited a wide memory window (MW) of 15.

Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO thin films.

Human brain-like synaptic behaviors of the ferroelectric field-effect transistors (FeFETs) were emulated by introducing the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gate stacks employing Al-doped HfO2 (Al:HfO2) ferroelectric thin films even at a low operation voltage. The synaptic plasticity of the MFMIS-FETs could be gradually modulated by the partial polarization characteristics of the Al:HfO2 thin films, which were examined to be dependent on the applied pulse conditions. Based on the ferroelectric polarization switching dynamics of the Al:HfO2 thin films, the proposed devices successfully emulate biological synaptic functions, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), and spike timing-dependent plasticity (STDP).

Impact of Polyimide Film Thickness for Improving the Mechanical Robustness of Stretchable InGaZnO Thin-Film Transistors Prepared on Wavy-Dimensional Elastomer Substrates.

We report on the In-Ga-Zn-O thin-film transistors (IGZO TFTs) with outstanding mechanical stretchability, which were fabricated on ultrathin polyimide (PI) film/prestrained elastomer with a wavy-dimensional structure. The device characteristics of the fabricated devices were evaluated under mechanically strained conditions with various strains. The operational reliabilities against the bias stress conditions and during the cyclic stretching tests were also carefully examined.

Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition.

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented. The Al concentration was fixed at 2.6 at% and the Hf concentration was varied from 3.

Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition.

Bias temperature stress stabilities of thin-film transistors (TFTs) using In-Ga-Zn-O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm). Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good characteristics with a high saturation mobility of 15.1 cm V s and low sub-threshold swing of 0.

Nitrogen Doping Effect for Improving Operation Reliability of Phase Modulator Using Ge₂Sb₂Te Thin Film for Hologram Image Implementation.

A phase modulation device was proposed for the implementation of hologram image for display applications. A Ge2Sb2Te5 (GST) film as thin as 7 nm was prepared between the ITO films to form the cavities corresponding a unit pixel. Nitrogen was incorporated into the GST for improving the thermal stability of the GST active region.

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.

We demonstrated the physical and electrical properties of the In-Ga-Zn-O (IGZO) thin films prepared by atomic-layer deposition (ALD) method and investigated the effects of the ALD temperature. The film composition (atomic ratio of In:Ga:Zn) and film density were examined to be 1:1:3 and 5.9 g/cm, respectively, for all the temperature conditions.

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm/Vs, a threshold voltage of 6.

Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C.

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers.

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations.

Surgical extrusion of multiple teeth with crown-root fractures: a case report with 18-months follow up.

The objective of this case report is to describe the treatment procedure involved in surgical extrusion of multiple crown-root fractures and review the critical factors to be considered for successful and predictable outcome. The treatment of complicated crown-root fracture in anterior teeth is likely to compromise function and aesthetics when approached with conventional surgical crown lengthening. Orthodontic extrusion has also been suggested; however, it is time-consuming, aesthetically compromising and hardly applicable on multiple anterior crown-root fractures due to the limited source of anchorage.

Antimony selenide phase-change nanowires for memory application.

Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (approximately 10 Momega) and low-resistance (approximately 1 komega) states which are attributed to amorphous and crystalline states, respectively.