Publications by authors named "Sungin Suh"
Article Synopsis
- * La-silicate films were deposited using specific chemical precursors at 310 °C, allowing control over the silicon concentration by adjusting the number of ALD cycles of SiO2, and comparisons were made with La2O3 films deposited under the same conditions.
- * The findings revealed that increasing silicon concentration reduced capacitance-voltage (C-V) hysteresis, and using Al2O3 as a passivation layer significantly lowered both hyster
Rapid atomic layer deposition (RALD) of SiO₂ thin films was achieved using trimethyl-aluminum and tris(tert-pentoxy)silanol (TPS) as the catalyst and Si precursor, respectively. A maximum growth rate as high as ∼28 nm/cycle was obtained by optimizing the catalyst layer density, whereas the previous reports showed lower values of 12 to 17 nm/cycle [Hausmann et al. Science2002, 298, 402-406; Burton et al.
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