Publications by authors named "Sung-Woon Cho"

Melanogenesis, a natural responsive mechanism of human skin to harmful radiation, is a self-triggered defensive neural activity safeguarding the body from radiation exposure in advance. With the increasing significance of radiation shielding in diverse medical health care and wearable applications, a biomimetic neuromorphic optoelectronic system with adaptive radiation shielding capability is often needed. Here, we demonstrate a transparent and flexible metal oxide-based photovoltaic neuromorphic defensive system.

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The implementation of photoelectrochemical water purification technology can address prevailing environmental challenges that impede the advancement and prosperity of human society. In this study, Cu, which is abundant on Earth, was fabricated using an electrochemical deposition process, in which the preferential orientation direction and carrier concentration of the Cu-based oxide semiconductor were artificially adjusted by carefully controlling the OH and applied voltage. In particular, CuO grown with a sufficient supply of OH ions exhibited the (111) preferred orientation, and the (200) surface facet was exposed, independently achieving 90% decomposition efficiency in a methyl orange (MO) solution for 100 min.

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Neuromorphic olfactory systems have been actively studied in recent years owing to their considerable potential in electronic noses, robotics, and neuromorphic data processing systems. However, conventional gas sensors typically have the ability to detect hazardous gas levels but lack synaptic functions such as memory and recognition of gas accumulation, which are essential for realizing human-like neuromorphic sensory system. In this study, a seamless architecture for a neuromorphic olfactory system capable of detecting and memorizing the present level and accumulation status of nitrogen dioxide (NO) during continuous gas exposure, regulating a self-alarm implementation triggered after 147 and 85 s at a continuous gas exposure of 20 and 40 ppm, respectively.

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To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing.

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In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE) process is suitable for industrial-scale metallization processes for the large-area and mass production of oxide thin-film transistors (TFTs). However, chemical attacks caused by the corrosive metal etchants used in the BCWE process cause unintended performance degradation of oxide semiconductors, making it difficult to implement oxide TFT circuits through industrial-scale metallization processes. Herein, we propose composition engineering of oxide semiconductors to enhance the chemical durability and electrical stability of oxide semiconductors.

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Resistive random-access memory (RRAM) devices have significant advantages for neuromorphic computing but have fatal problems of uncontrollability and abrupt resistive switching behaviors degrading their synaptic performance. In this paper, we propose the electrochemical design of an active CuO layer containing a strategic sublayer of ultrafine Cu nanoparticles (U-Cu NPs) to form uniformly dispersed conducting filaments, which can effectively improve the reliability for analog switching of RRAM-based neuromorphic computing. The electrochemical pulse deposited (EPD) U-Cu NPs are linked to the bottom electrode through a semi-conductive path within the bottom CuO layer, since the EPD is preferentially carried out on the conductive sites.

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The latest developments in bio-inspired neuromorphic vision sensors can be summarized in 3 keywords: smaller, faster, and smarter. (1) Smaller: Devices are becoming more compact by integrating previously separated components such as sensors, memory, and processing units. As a prime example, the transition from traditional sensory vision computing to in-sensor vision computing has shown clear benefits, such as simpler circuitry, lower power consumption, and less data redundancy.

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A titanium-indium tin oxide (TITO) multilayer reflector was investigated to improve the light efficiency of high-power, near-infrared, light-emitting diodes (NIR-LEDs). The TITO/Ag was fabricated by combining a patterned TITO and an omnidirectional reflector (ODR). For fabricating a high-power NIR-LED, the wafer bond process required the TITO reflective structure, which has patterns filled by AlAu contact metal, bonded directly to the Ag reflector deposited on the silicon wafer.

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While the chemical vapor deposition technique can be used to fabricate 2D materials in a larger area, materials like MoS have limited controllability due to their lack of self-controlling nature. This article presents a new technique for synthesizing a void-free millimeter-scale continuous monolayer MoS film through the diffusion of a well-controlled Mo, Na, and seeding promoter-based coating under a low-pressure N atmosphere. Compared to the conventional method, this technique provides precise control of solid precursors, where MoS grows next to the coating.

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As an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO (c-TiO) films required high-temperature crystallization conditions (≥500-600 °C), showing low electrical performance with a high defect density.

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Antimony selenide (Sb Se ) nanostructures enable bifunctional water purification by a single membrane through i) physical separation of water-insoluble oil and ii) photoelectrocatalytic degradation of water-soluble organic compounds. Sb Se nanorods with exposed surfaces of {h 0 0} and {h 0 l} planes exhibit superhydrophobicity (water contact angle of ≈159°) owing to extremely low surface energy of those dangling-bond-free van der Waals planes. Based on crystallographic understanding, superhydrophobic Sb Se nanorods were produced on a mesh-type substrate for utilization as a membrane for physical water/oil separation.

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Emulating the biological visual perception system typically requires a complex architecture including the integration of an artificial retina and optic nerves with various synaptic behaviors. However, self-adaptive synaptic behaviors, which are frequently translated into visual nerves to adjust environmental light intensities, have been one of the serious challenges for the artificial visual perception system. Here, an artificial optoelectronic neuromorphic device array to emulate the light-adaptable synaptic functions (photopic and scotopic adaptation) of the biological visual perception system is presented.

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To date, TiO films prepared by atomic layer deposition are widely used to prepare CuO nanowire (NW)-based photocathodes with photoelectrochemical (PEC) durability as this approach enables conformal coating and furnishes chemical robustness. However, this common approach requires complicated interlayers and makes the fabrication of photocathodes with reproducible performance and long-term stability difficult. Although sol-gel-based approaches have been well established for coating surfaces with oxide thin films, these techniques have rarely been studied for oxide passivation in PEC applications, because the sol-gel coating methods are strongly influenced by surface chemical bonding and have been mainly demonstrated on flat substrates.

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We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO gas.

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We have examined the effects of oxygen content and thickness in sputtered InSnO (ITO) electrodes, especially for the application of imperceptible amorphous-InGaZnO (-IGZO) thin-film transistors (TFTs) in humidity sensors. The imperceptible -IGZO TFT with 50-nm ITO electrodes deposited at Ar:O₂ = 29:0.3 exhibited good electrical performances with V of -0.

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We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs.

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In this paper, a simple and controllable "wet pulse annealing" technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions.

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The effect of multivalent metal cations, including vanadium(V) and tin (Sn), on the electrical properties of vanadium-doped zinc tin oxide (VZTO) was investigated in the context of the fabrication of thin-film transistors (TFTs) using a single VZTO film and VZTO/ZTO bilayer as channel layers. The single VZTO TFT did not show any response to the gate voltage (insulator-like behavior). On the other hand, the VZTO/ZTO bilayer TFT exhibited a typical TFT transfer characteristic (semiconducting behavior).

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