Photoconductive mechanism of IR-sensitive iodized PbSe thin films via strong hole-phonon interaction and minority carrier diffusion.

Photoconductive PbSe thin films are highly important for mid-infrared imaging applications. However, the photoconductive mechanism is not well understood so far. Here we provide additional insight on the photoconductivity mechanism using transmission electron microscopy, x-ray photoelectron microscopy, and electrical characterizations.

Laser annealing to improve PbSe thin film photosensitivity and specific detectivity.

PbSe thin films were deposited on / wafers using chemical bath deposition for mid-wave infrared (MWIR) detection. To enhance the photosensitivity of PbSe thin films, oxidation, followed by iodization, was performed to create a / two-layer system for efficient MWIR detection in the spectral range from 3 µm to 5 µm. A near-infrared (IR) laser annealing was performed after sensitization with 1070 nm wavelength at an energy density of 1/ to selectively heat the PbSe thin films.