Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration.

Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, has broad development prospects in the optoelectronics field. We analyze the effects of trap states on the output characteristics of an inversion mode n-channel GaN SB-MOSFET using TCAD simulations.

Site-Specific Glycan Microheterogeneity Evaluation of Aflibercept Fusion Protein by Glycopeptide-Based LC-MSMS Mapping.

The evaluation of the protein glycosylation states of samples of aflibercept obtained from three different regions was conducted by site-specific N-linked glycan microheterogeneity profiling. Glycopeptide-based nano-LC MSMS mapping of tryptic-digested samples of each aflibercept lot provided site-specific information about glycan microheterogeneity on each of the five N-glycosylation sites (two sites in the VEGFR-1 region, two sites in the VEGFR-2 region, and one site in the human IgG Fc region). Next, the glycopeptide-mapping results obtained from the three different aflibercept lots were compared to evaluate the similarity between the samples.

A Schottky-Type Metal-Semiconductor-Metal AlGaN UV Sensor Prepared by Using Selective Annealing.

Asymmetric metal-semiconductor-metal (MSM) aluminum gallium nitride (AlGaN) UV sensors with 24% Al were fabricated using a selective annealing technique that dramatically reduced the dark current density and improved the ohmic behavior and performance compared to a non-annealed sensor. Its dark current density at a bias of -2.0 V and UV-to-visible rejection ratio (UVRR) at a bias of -7.

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate.

The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration process is typically utilized, which involves a backside substrate etching and a wafer-to-wafer bonding process. In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) on an epitaxially grown GaN layer on silicon substrate.

Comparative Glycopeptide Analysis for Protein Glycosylation by Liquid Chromatography and Tandem Mass Spectrometry: Variation in Glycosylation Patterns of Site-Directed Mutagenized Glycoprotein.

Glycosylation is one of the most important posttranslational modifications for proteins, including therapeutic antibodies, and greatly influences protein physiochemical properties. In this study, glycopeptide mapping of a reference and biosimilar recombinant antibodies (rAbs) was performed using liquid chromatography-electrospray ionization tandem mass spectrometry (LC-ESI-MS/MS) and an automated Glycoproteome Analyzer (GPA) algorithm. The tandem mass analyses for the reference and biosimilar samples indicate that this approach proves to be highly efficient in reproducing consistent analytical results and discovering the implications of different rAb production methods on glycosylation patterns.

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO₂ Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH₃)₂]₃/C₇H₈ Cocktail Precursor.

The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO₂) dielectric thin films that were fabricated using a CpZr[N(CH₃)₂]₃/C₇H₈ cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO₂ films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO₂ films formed at 250-350 °C with an atomic ratio of O to Zr of 1.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlGaN Buffer Layer.

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers.

Loss of PTEN is associated with aggressive behavior in ERG-positive prostate cancer.

Background: The associations of ERG overexpression with clinical behavior and molecular pathways of prostate cancer are incompletely known. We assessed the association of ERG expression with AR, PTEN, SPINK1, Ki-67, and EZH2 expression levels, deletion, and mutations of chromosomal region 3p14 and TP53, and clinicopathologic variables.

Methods: The material consisted of 326 prostatectomies, 166 needle biopsies from men treated primarily with endocrine therapy, 177 transurethral resections of castration-resistant prostate cancers (CRPC), and 114 CRPC metastases obtained from 32 men.

Retroviral gene therapy: safety issues and possible solutions.

The recent incidents of leukemia development in X-SCID patients after a successful treatment of the disease with retroviral gene therapy raised concerns regarding the safety of the use of retroviral vectors in clinical gene therapy. In this review, we have tried to re-evaluate the safety issues related to the use of retroviral vectors in human clinical trials and to suggest possible appropriate solutions to the issues. As revealed by the X-SCID incident, oncogenesis caused by retroviral insertional activation of host genes is one of the most prominent risks.

Construction of retroviral vectors with enhanced efficiency of transgene expression.

Retroviral vectors have been widely used in gene therapy due to their simple genomic structure and high transduction efficiency. We report a construction of Moloney murine sarcoma virus (MoMSV) and Moloney murine leukemia virus (MoMLV) hybrid-based retroviral vectors with significantly improved efficiency of transgene expression after stable incorporation into the host genome. In these vectors, the residual gag gene coding sequence located in the extended region of packaging signal was removed.

A restrictive element 1 (RE-1) in the VIP gene modulates transcription in neuronal and non-neuronal cells in collaboration with an upstream tissue specifier element.

The vasoactive intestinal peptide (VIP) gene has been studied extensively as a prototype neuronal gene containing multiple cis-active elements that confer responsiveness to cell lineage, neurotrophic, and activity-dependent intrinsic and extrinsic cues. However, reporter genes containing the presumptive complete regulatory region 5' to the start of transcription do not confer tissue-specific gene expression in vivo. We therefore sought cis-regulatory elements downstream of the transcriptional start that might confer additional tissue-specific and tissue-restrictive properties to the VIP transcriptional unit.

A calcium-initiated signaling pathway propagated through calcineurin and cAMP response element-binding protein activates proenkephalin gene transcription after depolarization.

Essential components of a signal-transduction pathway regulating activity-dependent neuropeptide gene transcription have been identified. Proenkephalin (PEnk) gene activation after depolarization of chromaffin cells with 40 mM KCl was blocked by the voltage-sensitive calcium-channel blocker methoxyverapamil (D600) (30 microM) and by calcineurin inhibition with 100 nM cyclosporin A or ascomycin but not by inhibiting new protein synthesis with 0.5 microg/ml cycloheximide.