One-Lead Single-Electron Source with Charging Energy.

Single-electron sources, formed by a quantum dot (QD), are key elements for realizing electron analogue of quantum optics. We develop a new type of single-electron source with functionalities that are absent in existing sources. This source couples with only one lead.

Nanomachining-enabled strain manipulation of magnetic anisotropy in the free-standing GaMnAs nanostructures.

Strain perturbs atomic ordering in solids, with far-reaching consequences from an increased carrier mobility to localization in Si, stabilization of electric dipoles and nanomechanical transistor action in oxides, to the manipulation of spins without applying magnetic fields in n-GaAs. In GaMnAs, a carrier-mediated ferromagnetic semiconductor, relativistic spin-orbit interactions - highly strain-dependent magnetic interactions - play a crucial role in determining the magnetic anisotropy (MA) and anisotropic magnetoresistance (AMR). Strain modifies the MA and AMR in a nanomachined GaMnAs structure as measured by the anomalous Hall effect (AHE) and the planar Hall effect (PHE).

Universality of periodicity as revealed from interlayer-mediated cracks.

A crack and its propagation is a challenging multiscale materials phenomenon of broad interest, from nanoscience to exogeology. Particularly in fracture mechanics, periodicities are of high scientific interest. However, a full understanding of this phenomenon across various physical scales is lacking.

Free-Standing GaMnAs Nanomachined Sheets for van der Pauw Magnetotransport Measurements.

We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial AlGaAs layer, free-standing metallic GaMnAs (with ~6% Mn) microsheets (with ~85 K) with integrated electrical probes are realized for magnetotransport measurements in the van der Pauw geometry. GaMnAs epilayer needs to be physically isolated to avoid buckling effects stemming from the release of lattice mismatch strain during the removal of the AlGaAs sacrificial layer.

Tunable double and triple quantum dots in carbon nanotube with local side gates.

We demonstrate a simple but efficient design for forming tunable single, double and triple quantum dots (QDs) in a sub-μm-long carbon nanotube (CNT) with two major features that distinguish this design from that of traditional CNT QDs: the use of i) Al2Ox tunnelling barriers between the CNT and metal contacts and ii) local side gates for controlling both the height of the potential barrier and the electron-confining potential profile to define multiple QDs. In a serial triple QD, in particular, we find that a stable molecular coupling state exists between two distant outer QDs. This state manifests in anti-crossing charging lines that correspond to electron and hole triple points for the outer QDs.

Multimode circuit optomechanics near the quantum limit.

The coupling of distinct systems underlies nearly all physical phenomena. A basic instance is that of interacting harmonic oscillators, giving rise to, for example, the phonon eigenmodes in a lattice. Of particular importance are the interactions in hybrid quantum systems, which can combine the benefits of each part in quantum technologies.

Scalable assembly method of vertically-suspended and stretched carbon nanotube network devices for nanoscale electro-mechanical sensing components.

For the first time, vertically suspended and stretched carbon nanotube network junctions were fabricated in large quantity via the directed assembly strategy using only conventional microfabrication facilities. In this process, surface molecular patterns on the side-wall of the Al structures were utilized to guide the assembly and alignment of carbon nanotubes in the solution. We also performed extensive experimental (electrical and mechanical) analysis and theoretical simulation about the vertically suspended single-walled carbon nanotube network junctions.