Effect of adjacent bit-line cell interference on low frequency noise in NAND flash memory cell strings.

The effect of adjacent bit-line (BL) interference on low frequency in 26 nm NAND flash memory was characterized. With the program (P) and erase (E) states of adjacent cells, current fluctuation (deltaI(BL)) and corner frequency (f(c)) of Lorentzian spectrum were changed. DeltaI(BL) due to RTN ranges from approximately 67.

A two-dimensional DNA lattice implanted polymer solar cell.

A double crossover tile based artificial two-dimensional (2D) DNA lattice was fabricated and the dry-wet method was introduced to recover an original DNA lattice structure in order to deposit DNA lattices safely on the organic layer without damaging the layer. The DNA lattice was then employed as an electron blocking layer in a polymer solar cell causing an increase of about 10% up to 160% in the power conversion efficiency. Consequently, the resulting solar cell which had an artificial 2D DNA blocking layer showed a significant enhancement in power conversion efficiency compared to conventional polymer solar cells.