Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal detection. However, the current strategies for stabilizing axial microstructures (e.g.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2022
The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs.
View Article and Find Full Text PDFA TEM sample preparation technique for micrometer-sized powder particles in the 1-10 μm size range is proposed, using a focused ion beam (FIB) system. It is useful for characterizing elemental distributions across an entire cross-section of a particle. It is a simple and universal method without using any embedding agent, enabling the powder particles with different size, shape or orientation to be easily selected based on the SEM observations.
View Article and Find Full Text PDFOne-dimensional (1D) metallic mirror-twin boundaries (MTBs) in monolayer transition-metal dichalcogenides exhibit a periodic charge modulation and provide an ideal platform for exploring collective electron behavior in the confined system. The underlying mechanism of the charge modulation and how the electrons travel in 1D structures remain controversial. Here, for the first time, we observed atomic-scale structures of the charge distribution within one period in MTB of monolayer MoTe by using scanning tunneling microscopy/spectroscopy.
View Article and Find Full Text PDFWe report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[1̄10]//Co(0001)[112̄0]//MgO(111)[101̄]//GaN(0002)[112̄0].
View Article and Find Full Text PDF