Fabrication of imprint stamp by using nanosphere lithography and its utilization to photoluminescence enhancement.

Nanosphere lithography is proposed as a new technique for the fabrication of nanoscale pillars on p-GaN layer. This technique is an easy and simple process using a self-assembled monolayer of spheres, which act as etching masks to form pillars on a Si3N4 substrate, that could be utilized as a stamp for UV-based imprint lithography. We can apply the UV-based imprint technique in the field of solid-state lighting in order to extract more lights to out-world by texturing the outer surface of the light emitting diodes (LED) structure.