Ferroelectric domain states of a tetragonal BiFeO thin film investigated by second harmonic generation microscopy.

We investigate the ferroelectric state of a tetragonal BiFeO thin film grown on a LaAlO (001) substrate using an optical second harmonic generation (SHG) microscope. Whereas the ferroelectric state of this material hosts nanometer-sized domains which again form micrometer-sized domains of four different configurations, we could figure out the characteristic features of each domain from the SHG mapping with various sizes of the probe beam, i.e.

Possible flat band bending of the BiSbTeSe crystal cleaved in an ambient air probed by terahertz emission spectroscopy.

We investigate an evolution of the surface electronic state of the BiSbTeSe single crystal, which is one of the most bulk insulating topological insulators, by examining terahertz light emitted from the sample surface upon the illumination of the near-infrared femtosecond laser pulses. We find that the surface state with a flat band bending can appear in the course of the natural maturation process of the surface state in an ambient air. Furthermore, we demonstrate that the evolution of the surface electronic state can be accelerated, decelerated, or even stopped by controlling environmental conditions to contain different amount of HO, in particular.

Anisotropic Terahertz Emission from Bi2Se3 Thin Films with Inclined Crystal Planes.

We investigate the surface states of topological insulator (TI) Bi2Se3 thin films grown on Si nanocrystals and Al2O3 substrates by using terahertz (THz) emission spectroscopy. Compared to bulk crystalline Bi2Te2Se, film TIs exhibit distinct behaviors in the phase and amplitude of emitted THz radiation. In particular, Bi2Se3 grown on Al2O3 shows an anisotropic response with a strong modulation of the THz signal in its phase.