Electrical Properties and Reliability Analysis of Solution-Processed Indium Tin Zinc Oxide Thin Film Transistors with O2-Plasma Treatment.

In this paper, we report the effects of O2-plasma treatment on the reliability and electrical properties of indium tin zinc oxide (ITZO) films. Excellent electrical properties, including a saturation mobility (μsat) of ~20.2 cm2/V · s, a threshold voltage (VTH) of ~-6.