High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS Mixed-Dimensional (2D-0D) Heterostructure.

Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition-metal dichalcogenide (TMDC) quantum dots (QDs) with their broadband absorption spectra and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution-based processing, we demonstrate a superlarge (∼0.75 mm), ultraviolet-visible (UV-vis) broadband (365-633 nm) phototransistor made of WS QDs-decorated chemical vapor deposited (CVD) graphene as the active channel with extraordinary stability and durability under ambient conditions (without any degradation of photocurrent until 4 months after fabrication).