Flexible Nanoscale Amorphous Oxide Transistors with a Gold-Assisted Transfer Method.

We present a new approach to achieve nanoscale transistors on ultrathin flexible substrates with conventional electron-beam lithography. Full devices are first fabricated on a gold sacrificial layer covering a rigid silicon substrate, and then coated with a polyimide film and released from the rigid substrate. This approach bypasses nanofabrication constraints on flexible substrates: (i) electron-beam surface charging, (ii) alignment inaccuracy due to the wavy substrate, and (iii) restricted thermal budgets.

Design optimization and efficiency enhancement of axial junction nanowire solar cells utilizing a forward scattering mechanism.

We report the design, optimization, and performance analysis of three axial junction nanowire solar cells (NW SCs) based on cadmium telluride (CdTe), copper indium gallium selenide (CIGS), and copper zinc tin sulfide (CZTS) with significant improvement in their optical and electrical characteristics compared to their planar counterparts. It is shown that the performance of these NW SCs can be further improved by incorporating a hemispherical indium doped tin oxide (ITO) forward scatterer on top of the ITO front contact of the solar cells. We also compare forward scatterer incorporated NW SCs with forward scatterer incorporated planar solar cells (PSCs) and observe that forward scatterers significantly enhance the absorption in both cases.