Emerging properties of carbon based 2D material beyond graphene.

Graphene turns out to be the pioneering material for setting up boulevard to a new zoo of recently proposed carbon based novel two dimensional (2D) analogues. It is evident that their electronic, optical and other related properties are utterly different from that of graphene because of the distinct intriguing morphology. For instance, the revolutionary emergence of Dirac cones in graphene is particularly hard to find in most of the other 2D materials.

Electronic structural critique of interesting thermal and optical properties of CGe germagraphene.

In this communication, we report a theoretical attempt to understand the involvement of the electronic structure in determining the optical and thermal properties of C17Ge germagraphene, a buckled two-dimensional material. The structure is found to be a direct bandgap semiconductor with low carrier effective mass. Our study has revealed the effect of spin-orbit coupling on the band structure, and the appearance of spin Hall current on the material.

The topology and robustness of two Dirac cones in S-graphene: A tight binding approach.

Present work reports an elegant method to address the emergence of two Dirac cones in a non-hexagonal graphene allotrope S-graphene (SG). We have availed nearest neighbour tight binding (NNTB) model to validate the existence of two Dirac cones reported from density functional theory (DFT) computations. Besides, the real space renormalization group (RSRG) scheme clearly reveals the key reason behind the emergence of two Dirac cones associated with the given topology.

Simple correction to bandgap problems in IV and III-V semiconductors: an improved, local first-principles density functional theory.

We report results from a fast, efficient, and first-principles full-potential Nth-order muffin-tin orbital (FP-NMTO) method combined with van Leeuwen-Baerends correction to local density exchange-correlation potential. We show that more complete and compact basis set is critical in improving the electronic and structural properties. We exemplify the self-consistent FP-NMTO calculations on group IV and III-V semiconductors.