Manipulating ultrafast magnetization dynamics of ferromagnets using the odd-even layer dependence of two-dimensional transition metal di-chalcogenides.

Two-dimensional transition metal dichalcogenides (TMDs) have drawn immense interest due to their strong spin-orbit coupling and unique layer number dependence in response to spin-valley coupling. This leads to the possibility of controlling the spin degree of freedom of the ferromagnet (FM) in thin film heterostructures and may prove to be of interest for next-generation spin-based devices. Here, we experimentally demonstrate the odd-even layer dependence of WS nanolayers by measurements of the ultrafast magnetization dynamics in WS/CoFeB thin film heterostructures by using time-resolved Kerr magnetometry.

High temperature stability in few atomic layer MoS based thin film heterostructures: structural, static and dynamic magnetization properties.

Layered transition metal dichalcogenides (TMDs) have shown commendable properties for spintronic applications. From the device perspective, the structural quality of the TMD as well as its interface with the adjacent ferromagnetic (FM) layer is of paramount importance. Here, we present the spin-dynamic behaviour in the widely studied TMDs, , MoS using CoFeB (CoFeB), , in MoS(1-4 layers)/CoFeB(4-15 nm) heterostructures, both in the as-grown state and in the annealed state (400 °C in a vacuum).

Topological transport properties of highly oriented BiTethin film deposited by sputtering.

Topological insulators (TIs) are the promising materials for next-generation technology due to their exotic features such as spin momentum locking, conducting surface states, etc. However, the high-quality growth of TIs by sputtering technique, which is one of the foremost industrial requirements, is extremely challenging. Also, the demonstration of simple investigation protocols to characterize topological properties of TIs using electron-transport methods is highly desirable.

Disordered spin gapless semiconducting CoFeCrGa Heusler alloy thin films on Si (100): experiment and theory.

Spin gapless semiconductors (SGSs) are an intriguing class of quantum materials that bridge the gap between half-metallic ferromagnets and semiconductors. The presence of a semiconducting bandgap for one spin channel and zero band gap for other spin channels, together with the possibility of four different band structure configurations, makes them one of the most desirable candidates to be used in tunable spin transport based spintronics devices. Here, we have performed various structural, magnetic and transport measurements on an optimized CoFeCrGa (CFCG) Heusler alloy thin film (∼50 nm) grown over a Si(100) substrate using an industry-viable magnetron sputtering technique.

Spin Pumping through Different Spin-Orbit Coupling Interfaces in β-W/Interlayer/CoFeAl Heterostructures.

Spin pumping has been considered a powerful tool to manipulate the spin current in a ferromagnetic/nonmagnetic (FM/NM) system, where the NM part exhibits large spin-orbit coupling (SOC). In this work, the spin pumping in β-W/Interlayer (IL)/CoFeAl (CFA) heterostructures grown on Si(100 is systematically investigated with different ILs in which SOC strength ranges from weak to strong. We first measure the spin pumping through the enhancement of effective damping in CFA by varying the thickness of β-W.

Large Damping-Like Spin-Orbit Torque in a 2D Conductive 1T-TaS Monolayer.

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.

Alterations in circulating concentrations of IL-17, IL-31 and total IgE in dogs with atopic dermatitis.

Background: The pathogenesis of canine atopic dermatitis (AD) is complex. Dysregulation of the cutaneous immune system is considered an important regulator of the allergic response. Exploration of association of interleukin-17 (IL-17), IL-31, IgE and leukogram attributes with canine AD could provide novel insights into its immunopathology.

Site-specific growth of oriented ZnO nanocrystal arrays.

We report on the growth of ZnO nanocrystals having a hexagonal, prismatic shape, sized 700 nm × 600 nm, on bare indium tin oxide (ITO) substrates. The growth is induced by a low ion flux and involves a low-temperature electrodeposition technique. Further, vertically aligned periodic nanocrystal (NC) growth is engineered at predefined positions on polymer-coated ITO substrates patterned with ordered pores.

Observation of Skyrmions at Room Temperature in CoFeAl Heusler Alloy Ultrathin Film Heterostructures.

Magnetic skyrmions are topological spin-textures having immense potential for energy efficient spintronic devices. Here, we report the observation of stable skyrmions in unpatterned Ta/CoFeAl(CFA)/MgO thin film heterostructures at room temperature in remnant state employing magnetic force microscopy. It is shown that these skyrmions consisting of ultrathin ferromagnetic CFA Heusler alloy result from strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations.

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers.

The static and dynamic magnetization response of the CoFeB/IrMn/CoFeB trilayer system with varying thickness of the antiferromagnetic (AF) IrMn layer is investigated using magnetization hysteresis (-) and ferromagnetic resonance (FMR) measurements. The study shows that the two CoFeB layers are coupled via a long-range dynamic exchange effect through the IrMn layer up to a thickness of 6 nm. It is found that with the increase in IrMn layer thickness a nearly linear enhancement of the effective magnetic damping constant occurs, which is associated with the simultaneous influence of spin pumping and interlayer exchange coupling effects.

Capping Layer (CL) Induced Antidamping in CL/Py/β-W System (CL: Al, β-Ta, Cu, β-W).

For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (α) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/β-W(t)/Si (Py = NiFe and t = thickness of β-W), which is in contrast to the increase of α (i.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging.

Anomalous anti-damping in sputtered β-Ta/Py bilayer system.

Anomalous decrease in effective damping parameter αeff in sputtered Ni81Fe19 (Py) thin films in contact with a very thin β-Ta layer without necessitating the flow of DC-current is observed. This reduction in αeff, which is also referred to as anti-damping effect, is found to be critically dependent on the thickness of β-Ta layer; αeff being highest, i.e.

Interfacial Charge Induced Magnetoelectric Coupling at BiFeO₃/BaTiO₃ Bilayer Interface.

Bilayer thin films of BiFeO3-BaTiO3 at different thicknesses of BiFeO3 were prepared by RF-magnetron sputtering technique. A pure phase polycrystalline growth of thin films was confirmed from XRD results. Significantly improved ferroelectric polarization (2Pr ∼ 30 μC/cm(2)) and magnetic moment (Ms ∼ 33 emu/cc) were observed at room temperature.

Room temperature ferromagnetism in Co-incorporated TiO2 thin films.

Observation of room temperature ferromagnetism (RTFM) in nano-crystalline Co-incorporated titanium dioxide [Ti(1-x)Co(x)O2(x = 0.05)] thin films prepared by spray pyrolysis technique is reported. While only the anatase phase was detected in as-deposited 5 at.