Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.

In this study, the effect of substrate orientation on the structural quality of Au-catalyzed epitaxial GaAs nanowires grown by a molecular beam epitaxy reactor has been investigated. It was found that the substrate orientations can be used to manipulate the nanowire catalyst composition and the catalyst surface energy and, therefore, to alter the structural quality of GaAs nanowires grown on different substrates. Defect-free wurtzite-structured GaAs nanowires grown on the GaAs (110) substrate have been achieved under our growth conditions.

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase.

Single InAs nanowire room-temperature near-infrared photodetectors.

Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high Ion/Ioff ratio of 10(5).