New Strategy for Improvement of Interfacial Interactions between Poly(arylene sulfide sulfone) and Carbon Fiber by Grafting Polymeric Chains via Thiol-Ene Click Chemistry.

A simple and efficient strategy for enhancing the interfacial interaction in carbon fiber-reinforced poly(arylene sulfide sulfone) (CF/PASS) composites by grafting polymeric chains via thiol-ene click chemistry is reported here. Simultaneously, three thiol compounds and carbon nanotubes were grafted on CFs to explore the reaction between the CF and thiol groups. X-ray photoelectron spectroscopy, Raman spectroscopy, and normalized temperature-dependent IR spectroscopy results confirm the successful grafting of three thiol compounds, carbon nanotubes, and polymer chains.

Improve the Interfacial Properties between Poly(arylene sulfide sulfone) and Carbon Fiber by Double Polymeric Grafted Layers Designed on a Carbon Fiber Surface.

Double polymeric grafted layer is constructed by two steps of chemical reaction, in which two polymers had been used, respectively polydopamine (PDA) film and modified PASS (NH-PASS) resin containing amine group, as the interphase in carbon fiber reinforced poly(arylene sulfide sulfone) (PASS) composite (CF/PASS) to work on enhancing the interfacial property. All the test results of chemical components and chemical structures on the carbon fiber surface show that the double polymeric grafted layer was constructed successfully with PDA and NH-PASS chains. And obvious characteristics of thin PDA film and a polymer layer can be clearly seen in the morphology of modified carbon fiber.

Self-aligned stitching growth of centimeter-scale quasi-single-crystalline hexagonal boron nitride monolayers on liquid copper.

Two-dimensional hexagonal boron nitride (hBN) atomic crystals are excellent charge scattering screening interlayers for advanced electronic devices. Although wafer-scale single crystalline hBN monolayer films have been demonstrated on liquid Au and solid Cu (110) and (111) vicinal surfaces, their reproducible growth still remains challenging. Here, we report the facile self-aligned stitching growth of centimeter-scale quasi-single-crystalline hBN monolayer films through synergistic chemical vapor deposition growth kinetics and liquid Cu rheological kinetics control.

Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.

InGaZnO (IGZO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in flat panel displays. However, the compromised transport performance and bias stress instability are critical issues inhibiting its application in ultrahigh-resolution optoelectronic displays. Here, we report the fabrication of graded channel junctionless IGZO:O|N TFTs with both high transporting properties and good bias stress stability by systematic manipulation of oxygen vacancy (V) defects through sequential O antidoping and O/N codoping of the continuous IGZO framework.

Molecular Beam Epitaxy Scalable Growth of Wafer-Scale Continuous Semiconducting Monolayer MoTe on Inert Amorphous Dielectrics.

Monolayer MoTe , with the narrowest direct bandgap of ≈1.1 eV among Mo- and W-based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near-infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet.

Fe/Zn-modified tricalcium phosphate (TCP) biomaterials: preparation and biological properties.

Bone repairing materials play an essential role in the repair treatment of bone defects. The presence of calcium phosphate invertebrates is of significance for bone repairing processes. However, the mechanical properties and osteogenic activities of many current calcium phosphate materials are not ideal, which limit their biological applications.

Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films.

We report here a reliable and reproducible single-step (without post-annealing) fabrication of phase-pure p-type rhombohedral CuAlO2 (r-CuAlO2) thin films by reactive magnetron sputtering. The dependence of crystallinity and phase compositions of the films on the growth temperature was investigated, revealing that highly-crystallized r-CuAlO2 thin films could be in situ grown in a narrow temperature window of ∼940 °C. Optical and electrical property studies demonstrate that (i) the films are transparent in the visible light region, and the bandgaps of the films increased to ∼3.