Optical control of spectral diffusion with single InAs quantum dots in a silver-embedded nanocone.

We study the spectral diffusion in a single epitaxial InAs quantum dot placed in a silver-embedded nanocone structure. Making use of a series of stroboscopic detection of optical transitions, we demonstrate the temporal fluctuations in peak energy of photoluminescence. In particular, the photoluminescence fluctuations can be effectively suppressed by strong illumination.

Ultrahigh quality factor in a metal-embedded semiconductor microdisk cavity.

We numerically and theoretically investigate electrodynamics of a metal-embedded semiconductor microdisk cavity. The electrodynamics of a cavity mode is discussed from the viewpoint of quantum mechanics, which clarifies the condition for high Q factor. Using numerical calculations, we optimize the cavity structure and show that the Q factor can be increased up to 1,700,000.

Subwavelength metallic cavities with high-Q resonance modes.

Metallic cavities have been extensively studied to realize small-volume nanocavities and nanolasers. However cavity-resonance quality (Q) factors of nanolasers observed up to now remain low (up to ∼500) due to metal optical absorption. In this paper, we report the observation of highest Q factors of 9000 at low temperature and ∼6000 near room temperature in a metallic cavity with a probe of sub-bandgap emission of Si-doped GaAs.

Metal-coated semiconductor nanostructures and simulation of photon extraction and coupling to optical fibers for a solid-state single-photon source.

We have realized metal-coated semiconductor nanostructures for a stable and efficient single-photon source (SPS) and demonstrated improved single-photon extraction efficiency by the selection of metals and nanostructures. We demonstrate with finite-difference time-domain (FDTD) simulations that inclination of a pillar sidewall, which changes the structure to a nanocone, is effective in improving the photon extraction efficiency. We demonstrate how such nanocone structures with inclined sidewalls are fabricated with reactive ion etching.

Enhanced light absorption in thin-film solar cells with light propagation direction conversion.

Enhancement of optical absorption in thin-film solar cells (TF-SCs) has been the long-lasting issue to achieve high efficiencies. Grating couplers have been studied for the conversion of incident light into guided modes propagating along TF-SCs to extend optical path for higher optical absorption. However the wavelength band for the efficient conversion remained relatively narrow and the overall improvement of TF-SC efficiencies has been limited.

Origin of the blueshift of photoluminescence in a type-II heterostructure.

Blueshifts of luminescence observed in type-II heterostructures are quantitatively examined in terms of a self-consistent approach including excitonic effects. This analysis shows that the main contribution to the blueshift originates from the well region rather than the variation of triangular potentials formed in the barrier region. The power law for the blueshift, ΔEPL ∝ Plaserm, from m = 1/2 for lower excitation Plaser to m = 1/4 for higher excitation, is obtained from the calculated results combined with a rate equation analysis, which also covers the previously believed m = 1/3 power law within a limited excitation range.

Enhanced photon generation in a Nb/n-InGaAs/p-InP superconductor/semiconductor-diode light emitting device.

We experimentally demonstrate Cooper pairs' drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band.

Characterization of two-photon polarization mixed states generated from entangled-classical hybrid photon source.

We experimentally prepare bi-photon mixed states in polarization employing an entangled-classical hybrid photon emitter which can properly model solid-state entangled photon sources with uncorrelated background photons. Polarization-uncorrelated photon pairs in totally mixed (TM) states are embodied with classical thermal radiation, while the polarization-entangled ones in a Bell state are generated by conventional parametric down conversion. The bi-photon states generated from the hybrid photon emitter are characterized in terms of a linear entropy-tangle plane, which reveals the formation of two-qubit Werner states.

Transport properties of Andreev polarons in a superconductor-semiconductor-superconductor junction with superlattice structure.

Transport properties of a superconductor-semiconductor-superconductor (Su-Sm-Su) junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (rf) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction geometries.

Precise slit-width control of niobium apertures for superconducting LEDs.

We introduce a novel three-step procedure for precise niobium (Nb)-etching on the nanometer-scale, including the design of high contrast resist patterning and sacrifice layer formation under high radio frequency (RF) power. We present the results of precise slit fabrication using this technique and discuss its application for the production of superconducting devices, such as superconductor-semiconductor-superconductor (S-Sm-S) Josephson junctions. For the reactive ion etching (RIE) of Nb, we selected CF(4) as etchant gas and a positive tone resist to form the etching mask.

Luminescence of a cooper pair.

This Letter theoretically discusses the photon emission spectra of a superconducting p-n junction. On the basis of the second order perturbation theory for electron-photon interaction, we show that the recombination of a Cooper pair with two p-type carriers causes enhancement of the luminescence intensity. The calculated results of photon emission spectra explain characteristic features of observed signal in an recent experiment.

Self-ordering of nanofacets on vicinal SiC surfaces.

Vicinal 4H and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed the characteristic self-ordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index (112;n) that are induced by equilibrium surface phase separation.