Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapor Deposited Graphene Layers and Boundaries.

The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bilayer, and trilayer graphene channels and their layer boundaries and folds that are usually present in CVD graphene samples.

Strain Effects on the Energy-Level Alignment at Metal/Organic Semiconductor Interfaces.

Flexible and wearable devices are among the upcoming trends in the opto-electronics market. Nevertheless, bendable devices should ensure the same efficiency and stability as their rigid analogs. It is well-known that the energy barriers between the metal Fermi energy and the molecular levels of organic semiconductors devoted to charge transport are key parameters in the performance of organic-based electronic devices.

A molecular spin-photovoltaic device.

We fabricated a C fullerene-based molecular spin-photovoltaic device that integrates a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing.

Graphene as an electrode for solution-processed electron-transporting organic transistors.

Organic field-effect transistors (OFETs) are fundamental building blocks for plastic electronics such as organic photovoltaics or bendable displays with organic light emitting diodes, and radio-frequency identification (RFID) tags. A key part in the performance of OFET is the organic material constituting the channel. OFETs based on solution-processed polymers represent a new class of organic electronic devices.

Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces.

Energy barriers between the metal Fermi energy and the molecular levels of organic semiconductor devoted to charge transport play a fundamental role in the performance of organic electronic devices. Typically, techniques such as electron photoemission spectroscopy, Kelvin probe measurements, and in-device hot-electron spectroscopy have been applied to study these interfacial energy barriers. However, so far there has not been any direct method available for the determination of energy barriers at metal interfaces with n-type polymeric semiconductors.

Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction.

The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect.

Hot electron transport in a strongly correlated transition-metal oxide.

Oxide heterointerfaces are ideal for investigating strong correlation effects to electron transport, relevant for oxide-electronics. Using hot-electrons, we probe electron transport perpendicular to the La₀.₇Sr₀.