Publications by authors named "Subhankar Bedanta"

Hall effects, including anomalous and topological types, in correlated ferromagnetic oxides provide an intriguing framework to investigate emergent phenomena arising from the interaction between spin-orbit coupling and magnetic fields. SrRuOis a widely studied itinerant ferromagnetic system with intriguing electronic and magnetic characteristics. The electronic transport of SrRuOis highly susceptible to the defects (O/Ru vacancy, chemical doping, ion implantation), and interfacial strain.

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A magnetic skyrmionium can be perceived as an association of two magnetic skyrmions with opposite topological charges. In this work, we have investigated the transformation of skyrmionium into multi-skyrmionic states via domain wall pairs in three different devices with variable geometric configurations. The same device geometries are considered for single ferromagnetic layer and synthetic antiferromagnetic system.

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Generation and manipulation of pure spin current is the governing tool to develop spintronic devices. Spin pumping and the Inverse spin Hall effect (ISHE) are the frontier mechanisms to study the spin current in a system. Ferromagnets (FMs)/heavy metals (HMs) are heavily investigated in such studies.

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This article reports the dependence of exchange bias (EB) effect on interparticle interactions in nanocrystalline Co/CoO core/shell structures, synthesized using the conventional sol-gel technique. Analysis via powder X-Ray diffraction (PXRD) studies and transmission electron microscope (TEM) images confirm the presence of crystalline phases of core/shell Co/CoO with average particle size ≈ 18 nm. Volume fraction (φ) is varied (from 20% to 1%) by the introduction of a stoichiometric amount of non-magnetic amorphous silica matrix (SiO2) which leads to a change in interparticle interaction (separation).

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We have studied the effect of deposition pressure on the magnetization reversal, domains, anisotropy and Gilbert damping constant in the ferromagnetic (CoFeB and Co) single and bilayer samples. Hysteresis measured by magneto-optic Kerr microscopy for the single layer films prepared at higher deposition pressure indicate no change of loop shape i.e.

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Topological magnetic textures, characterized by integer topological charge, are potential candidates in future magnetic logic and memory devices, due to their smaller size and expected low threshold current density for their motion. An essential requirement to stabilize them is the Dzyaloshinskii-Moriya interaction (DMI) which promotes a particular chirality, leading to a unique value ofin a given material. However, recently coexistence of skyrmions and antiskyrmions, with opposite topological charge, in frustrated ferromagnets has been predicted using--classical Heisenberg model, which opens new perspectives, to use the topological charge as an additional degree of freedom.

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Exchange bias in ferromagnetic/antiferromagnetic systems can be explained in terms of various interfacial phenomena. Among these, spin glass frustration can affect the magnetic properties in exchange bias systems. Here we have studied a NiMn/CoFeB exchange bias system in which spin glass frustration seems to play a crucial role.

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The signature of magnetism without a ferromagnet in a non-magnetic heterostructure is novel as well as fascinating from a fundamental research point of view. It has been shown by Al'Mari et al. that magnetism can be induced at the interface of Cu/C due to a change in the density of states.

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Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0.67Sr0.

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BiSe is a well-established topological insulator (TI) having spin momentum locked Dirac surface states at room temperature and predicted to exhibit high spin to charge conversion efficiency (SCCE) for spintronics applications. The SCCE in TIs is characterized by an inverse Edelstein effect length (λ). We report an λ of ∼0.

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We present a comprehensive study on the magnetization reversal in the Fe/NiFe bilayer system by alternating the order of the magnetic layers. All the samples show growth-induced uniaxial magnetic anisotropy due to the oblique angle deposition technique. Strong interfacial exchange coupling between the Fe and NiFe layers leads to single-phase hysteresis loops in the bilayer system.

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In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the 'spinterface'. One of the main motivations in this field of organic spintronics is how to control the magnetic moment in the spinterface.

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The topic of magnetic antidot lattice (MAL) arrays has drawn attention from both fundamental research as well as from application point of view. MAL arrays are promising candidates for making domain engineering in thin films. For various applications it is necessary to understand the magnetization reversal mechanism as well as the relaxation dynamics.

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Probing the hybridized magnetic interface between organic semiconductor (OSC) and ferromagnetic (FM) layers has drawn significant attention in recent years because of their potential in spintronic applications. Recent studies demonstrate various aspects of organic spintronics such as magnetoresistance, induced interface moment etc. However, not much work has been performed to investigate the implications of such OSC/FM interfaces on the magnetization reversal and domain structure which are the utmost requirements for any applications.

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Magnetoelectric (ME) materials are of utmost interest in view of both fundamental understanding and novel desirable applications. Despite its smallness, the linear ME effect has been shown to control spintronic devices very efficiently, e.g.

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