Polycrystalline perovskite light-emitting diodes (PeLEDs) have shown great promise with high efficiency and easy processability. However, PeLEDs using single-cation polycrystalline perovskite emitters have demonstrated low efficiency due to defects within the grains and at the interfaces between the perovskite layer and the charge injection contact. Thus, simultaneous defect engineering of perovskites to suppress exciton loss within the grains and at the interfaces is crucial for achieving high efficiency in PeLEDs.
View Article and Find Full Text PDFThis review outlines problems and progress in development of solution-processed organic light-emitting diodes (SOLEDs) in industry and academia. Solution processing has several advantages such as low consumption of materials, low-cost processing, and large-area manufacturing. However, use of a solution process entails complications, such as the need for solvent resistivity and solution-processable materials, and yields SOLEDs that have limited luminous efficiency, severe roll-off characteristics, and short lifetime compared to OLEDs fabricated using thermal evaporation.
View Article and Find Full Text PDFCost-effective, high-throughput industrial applications of metal halide perovskites in large-area displays are hampered by the fundamental difficulty of controlling the process of polycrystalline film formation from precursors, which results in the random growth of crystals, leading to non-uniform large grains and thus low electroluminescence efficiency in large-area perovskite light-emitting diodes (PeLEDs). Here we report that highly efficient large-area PeLEDs with high uniformity can be realized through the use of colloidal perovskite nanocrystals (PNCs), decoupling the crystallization of perovskites from film formation. PNCs were precrystallized and surrounded by organic ligands, and thus they were not affected by the film formation process, in which a simple modified bar-coating method facilitated the evaporation of residual solvent to provide uniform large-area films.
View Article and Find Full Text PDFPerovskite light-emitting diodes (PeLEDs) based on three-dimensional (3D) polycrystalline perovskites suffer from ion migration, which causes overshoot of luminance over time during operation and reduces its operational lifetime. Here, we demonstrate 3D/2D hybrid PeLEDs with extremely reduced luminance overshoot and 21 times longer operational lifetime than 3D PeLEDs. The luminance overshoot ratio of 3D/2D hybrid PeLED is only 7.
View Article and Find Full Text PDFWe have achieved high-efficiency polycrystalline perovskite light-emitting diodes (PeLEDs) based on formamidinium (FA) and cesium (Cs) mixed cations without quantum dot synthesis. Uniform single-phase FACs PbBr polycrystalline films were fabricated by one-step formation with various FA:Cs molar proportions; then the influences of chemical composition on film morphology, crystal structure, photoluminescence (PL), and electroluminescence (EL) were systematically investigated. Incorporation of Cs cations in FAPbBr significantly reduced the average grain size (to 199 nm for FA:Cs = 90:10) and trap density; these changes consequently increased PL quantum efficiency (PLQE) and PL lifetime of FACs PbBr films and current efficiency (CE) of PeLEDs.
View Article and Find Full Text PDFHighly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs.
View Article and Find Full Text PDFA versatile metal nanowiring platform enables the fabrication of Ag nanowires (AgNW) at a desired position and orientation in an individually controlled manner. A printed, flexible AgNW has a diameter of 695 nm, a resistivity of 5.7 μΩ cm, and good thermal stability in air.
View Article and Find Full Text PDFACS Appl Mater Interfaces
June 2016
We introduce a simple, inexpensive, and large-area flexible transparent lamination encapsulation method that uses graphene films with polydimethylsiloxane (PDMS) buffer on polyethylene terephthalate (PET) substrate. The number of stacked graphene layers (nG) was increased from 2 to 6, and 6-layered graphene-encapsulation showed high impermeability to moisture and air. The graphene-encapsulated polymer light emitting diodes (PLEDs) had stable operating characteristics, and the operational lifetime of encapsulated PLEDs increased as nG increased.
View Article and Find Full Text PDFOrganic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.
View Article and Find Full Text PDFHighly efficient, simplified, solution-processed thermally activated delayed-fluorescence organic light-emitting diodes can be realized by using pure-organic thermally activated delayed fluorescence emitters and a multifunctional buffer hole-injection layer, in which high EQE (≈24%) and current efficiency (≈73 cd A(-1) ) are demonstrated. High-efficiency fluorescence red-emitting and blue-emitting devices can also be fabricated in this manner.
View Article and Find Full Text PDFA individually position-addressable large-scale-aligned Cu nanofiber (NF) array is fabricated using electro-hydrodynamic nanowire printing. The printed single-stranded Cu NF has a diameter of about 710 nm and resistivity of 14.1 μΩ cm and is effectively used as source/drain nanoelectrode in pentacene transistors, which show a 25-fold increased hole mobility than that of a device with Cu thin-film electrodes.
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