Low-temperature polycrystalline silicon waveguides for low loss transmission in the near-to-mid-infrared region.

Low-temperature deposited polycrystalline silicon waveguides are emerging as a flexible platform that allows for dense optoelectronic integration. Here, the optical transmission properties of poly-silicon waveguides have been characterized from the near-to-mid-infrared wavelength regime, extending the optical transmission well beyond previous reports in the telecom band. The poly-Si waveguides with a dimension of 3 µm × ∼0.

Nonlinear properties of laser-processed polycrystalline silicon waveguides for integrated photonics.

We report nonlinear optical characterization of cm-long polycrystalline silicon (poly-Si) waveguides at telecom wavelengths. Laser post-processing of lithographically-patterned amorphous silicon deposited on silica-on-silicon substrates provides low-loss poly-Si waveguides with surface-tension-shaped boundaries. Achieving optical losses as low as 4 dB cm enabled us to demonstrate effects of self-phase modulation (SPM) and two-photon absorption (TPA).

Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si-Ge Nanoscale Thin Films.

The ability to manipulate the composition of semiconductor alloys on demand and at nanometer-scale resolutions is a powerful tool that could be exploited to tune key properties such as the electronic band gap, mobility, and refractive index. However, existing methods to modify the composition involve altering the stoichiometry by temporal or spatial modulation of the process parameters during material growth, limiting the scalability and flexibility for device fabrication. Here, we report a laser processing method for localized tailoring of the composition in amorphous silicon-germanium (a-SiGe) nanoscale thin films on silicon substrates, postdeposition, by controlling phase segregation through the scan speed of the laser-induced molten zone.