Electronic transport in quantum-dot-in-perovskite solids.

We investigate theoretically the band transport of electrons and holes in a "quantum-dot-in-perovskite" solid, a periodic array of semiconductor nanocrystal quantum dots embedded in a matrix of lead halide perovskite. For concreteness we focus on PbS quantum dots passivated by inorganic halogen ligands and embedded in a matrix of CsPbI. We find that the halogen ligands play a decisive role in determining the band offset between the dot and matrix and may therefore provide a straightforward way to control transport experimentally.

The role of ligands in electron transport in nanocrystal solids.

We investigate theoretically the transport of electrons and holes in crystalline solids consisting of three-dimensional arrays of semiconductor nanocrystals passivated by two types of organic ligands-linear chain carboxylates and functionalized aromatic cinnamates. We focus on a critical quantity in transport: the quantum-mechanical overlap of the strongly confined electron and hole wavefunctions on neighboring nanocrystals. Using results from density-functional-theory (DFT) calculations, we construct a one-dimensional model system whose analytic wavefunctions reproduce the full DFT numerical overlap values.

Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth.

We develop a microscopic theoretical model of AlN, GaN, and InN film growth by atomic layer epitaxy. To make the model realistic, we take into account the atomic hydrogen that is created by the hydrogen plasma commonly used in plasma-assisted atomic layer epitaxy. This growth technique relies on separate deposition steps for nitrogen and the group-III cation.

Atomic Layer Epitaxy of Aluminum Nitride: Unraveling the Connection between Hydrogen Plasma and Carbon Contamination.

Atomistic control over the growth of semiconductor thin films, such as aluminum nitride, is a long-sought goal in materials physics. One promising approach is plasma-assisted atomic layer epitaxy, in which separate reactant precursors are employed to grow the cation and anion layers in alternating deposition steps. The use of a plasma during the growth-most often a hydrogen plasma-is now routine and generally considered critical, but the precise role of the plasma is not well-understood.

Ripening of Semiconductor Nanoplatelets.

Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon.

An intrinsic growth instability in isotropic materials leads to quasi-two-dimensional nanoplatelets.

Colloidal nanoplatelets are atomically flat, quasi-two-dimensional sheets of semiconductor that can exhibit efficient, spectrally pure fluorescence. Despite intense interest in their properties, the mechanism behind their highly anisotropic shape and precise atomic-scale thickness remains unclear, and even counter-intuitive for commonly studied nanoplatelets that arise from isotropic crystal structures (such as zincblende CdSe and lead halide perovskites). Here we show that an intrinsic instability in growth kinetics can lead to such highly anisotropic shapes.

Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation.

Quantum-dot molecules were constructed on a semiconductor surface using atom manipulation by scanning tunneling microscopy (STM) at 5 K. The molecules consist of several coupled quantum dots, each of which comprises a chain of charged adatoms that electrostatically confines intrinsic surface-state electrons. The coupling takes place across tunnel barriers created reversibly using the STM tip.

Microscopic theory of cation exchange in CdSe nanocrystals.

Although poorly understood, cation-exchange reactions are increasingly used to dope or transform colloidal semiconductor nanocrystals (quantum dots). We use density-functional theory and kinetic Monte Carlo simulations to develop a microscopic theory that explains structural, optical, and electronic changes observed experimentally in Ag-cation-exchanged CdSe nanocrystals. We find that Coulomb interactions, both between ionized impurities and with the polarized nanocrystal surface, play a key role in cation exchange.

Quantum dots with single-atom precision.

Quantum dots are often called artificial atoms because, like real atoms, they confine electrons to quantized states with discrete energies. However, although real atoms are identical, most quantum dots comprise hundreds or thousands of atoms, with inevitable variations in size and shape and, consequently, unavoidable variability in their wavefunctions and energies. Electrostatic gates can be used to mitigate these variations by adjusting the electron energy levels, but the more ambitious goal of creating quantum dots with intrinsically digital fidelity by eliminating statistical variations in their size, shape and arrangement remains elusive.

Synthesis and spectroscopy of PbSe fused quantum-dot dimers.

We report the synthesis and characterization of Pb-chalcogenide fused quantum-dot (QD) dimer structures. The resulting QD dimers range in length from 6 to 16 nm and are produced by oriented attachment of single QD monomers with diameters of 3.1-7.

Controlled switching within an organic molecule deliberately pinned to a semiconductor surface.

Bistable organic molecules were deposited on a weakly binding III-V semiconductor surface and then pinned into place using individual native adatoms. These pinning atoms, positioned by atomically precise manipulation techniques in a cryogenic scanning tunneling microscope (STM) at 5 K, stabilize the π-conjugated molecule against rotation excited by the tunneling electrons. The pinning allows triggering of the molecule's intrinsic switching mechanism (a hydrogen transfer reaction) by the STM tunnel current.

Epitaxial interfaces between crystallographically mismatched materials.

We report an unexpected mechanism by which an epitaxial interface can form between materials having strongly mismatched lattice constants. A simple model is proposed in which one material tilts out of the interface plane to create a coincidence-site lattice that balances two competing geometrical criteria--low residual strain and short coincidence-lattice period. We apply this model, along with complementary first-principles total-energy calculations, to the interface formed by molecular-beam epitaxy of cubic Fe on hexagonal GaN and find excellent agreement between theory and experiment.

Intrinsic magnetism at silicon surfaces.

It has been a long-standing goal to create magnetism in a non-magnetic material by manipulating its structure at the nanoscale. Many structural defects have unpaired spins; an ordered arrangement of these can create a magnetically ordered state. In this article we predict theoretically that stepped silicon surfaces stabilized by adsorbed gold achieve this state by self-assembly, creating chains of polarized electron spins with atomically precise structural order.

Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

Trapped-dopant model of doping in semiconductor nanocrystals.

We propose a framework for describing the impurity doping of semiconductor colloidal nanocrystals. The model is applicable when diffusion of impurities through the nanocrystal is sufficiently small that it can be neglected. In this regime, the incorporation of impurities requires that they stably adsorb on the nanocrystal surface before being overgrown.

Doped nanocrystals.

The critical role that dopants play in semiconductor devices has stimulated research on the properties and the potential applications of semiconductor nanocrystals, or colloidal quantum dots, doped with intentional impurities. We review advances in the chemical synthesis of doped nanocrystals, in the theoretical understanding of the fundamental mechanisms that control doping, and in the creation of highly conducting nanocrystalline films. Because impurities can be used to alter the properties of nanoscale materials in desirable and controllable ways, doped nanocrystals can address key problems in applications from solar cells to bioimaging.

Thermodynamics of carrier-mediated magnetism in semiconductors.

We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door to the construction of magnetic phase diagrams. As an example, we analyze the stability of a possible reentrant ferromagnetic semiconductor, in which increasing temperature leads to an increased carrier density such that the enhanced exchange coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised.

Spin injection and detection in silicon.

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques.

Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory.

We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and As atoms. First-principles transport calculations indicate that the increase in spin-injection efficiency is due to the abruptness and coherency of the annealed interface.

Impact of ripening on manganese-doped ZnSe nanocrystals.

We examine the impact of growth kinetics on the incorporation of Mn dopants into ZnSe nanocrystals. We synthesize such particles, also known as colloidal quantum dots, and use optical spectroscopy to extract information about the average number of Mn impurities per nanocrystal as the reaction proceeds. We find that this number increases with particle growth until the Zn and/or Se precursors are depleted in the reaction solution.