Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays.

Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30-100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique.