Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density.

A computational comparison of electron transfer from reduced ferredoxin to flavin adenine dinucleotide and a gold electrode.

We have carried out calculations of the electronic structure of ferredoxin and of the electronic coupling matrix element Hif for electron transfer from reduced ferredoxin to flavin adenine dinucleotide (FAD) and to cluster models of the Au111 surface and a Au111 surface with a mercaptopyridene self-assembled monolayer (SAM). We conclude, based on Hif2, that a gold electrode is approximately 14 times less efficient as an electron acceptor than FAD and that the mercaptopyridine SAM enhances electron transfer. The magnitude of Hif is large enough for these systems that the weak coupling limit approximations may no longer be valid.