Publications by authors named "Stephanie E Vasko"

Article Synopsis
  • Precise integration of materials at the nanoscale is crucial for developing advanced electronic and photonic devices.
  • Researchers employed an atomic force microscope (AFM) to create carbon-free silicon (Si), germanium (Ge), and silicon-germanium (SiGe) nanostructures with exact control over their size and shape.
  • The method can be scaled up for larger areas using specialized conducting stamps, and it can be adapted to work with various semiconductor materials by choosing different chemical precursors.
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Experiments and simulations are used to elucidate a new class of chemical reactions occurring near the tip-sample interface during high field chemistry of diphenylgermane. Current data during writing and bias dependent growth rate are analyzed, supplemented with data from ionization mass spectrometry, and compared with the simulation results.

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