A Twofold Approach in Loss Reduction of KTaNbO Ferroelectric Layers for Low-Loss Tunable Devices at Microwaves.

Ferroelectric oxide films are attractive to design and fabricate reconfigurable and miniaturized planar devices operating at microwaves due to the large electric field dependence of their dielectric permittivity. In particular, KTaNbO (KTN) ferroelectric material presents a high tunability under moderate dc bias electric field. However, its intrinsic dielectric loss strongly contributes to the global loss of the related devices and limits their application areas at microwaves.

KTa0.6Nb0.4O3 ferroelectric thin film behavior at microwave frequencies for tunable applications.

In this study about the relationships between structural and microwave electrical properties of KTa(1-x)NbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.