Effect of Advanced Footwear Technology Spikes on Sprint Acceleration: A Multiple N-of-1 Trial.

Background: In contrast with Advanced Footwear Technology-AFT running shoes for long-distance, little is known about AFT sprint spikes on performance and acceleration parameters. However, their use has become widespread since the Tokyo 2020 Olympics, and knowledge of their effects would seem to be an essential starting point before any clinical or socio-economic considerations.

Objectives: Our objectives were to determine intra- and inter-subject sprinting performance modifications with Nike AFT spikes (NAS) compared to standard spiked-shoes (SS).

Fast current-induced skyrmion motion in synthetic antiferromagnets.

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge.

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions.

Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short- and long-term memory, nonlinear fast response, and relatively small footprint. Here we demonstrate experimentally how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions can emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device.

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas.

Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure.

Helicity dependent photoresistance measurement vs. beam-shift thermal gradient.

Optical detection techniques are among the most powerful methods used to characterize spintronic phenomena. The spin orientation can affect the light polarization, which, by the reciprocal mechanism, can modify the spin density. Numerous recent experiments, report local changes in the spin density induced by a circularly polarized focused laser beam.

Gate-controlled skyrmion and domain wall chirality.

Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter.

Effect of Chiral Damping on the dynamics of chiral domain walls and skyrmions.

Friction plays an essential role in most physical processes that we experience in our everyday life. Examples range from our ability to walk or swim, to setting boundaries of speed and fuel efficiency of moving vehicles. In magnetic systems, the displacement of chiral domain walls (DW) and skyrmions (SK) by Spin Orbit Torques (SOT), is also prone to friction.

Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance.

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junctions comprising a magnetically switchable assistance layer. These double junctions are used as memory cells in spin transfer torque magnetic random access memory (STT-MRAM) devices. Their working principle, fabrication and electrical characterization are described and their performances are compared to those of reference devices without an assistance layer.

Helium Ions Put Magnetic Skyrmions on the Track.

Magnetic skyrmions are deemed to be the forerunners of novel spintronic memory and logic devices. While their observation and their current-driven motion at room temperature have been demonstrated, certain issues regarding their nucleation, stability, pinning, and skyrmion Hall effect still need to be overcome to realize functional devices. Here, we demonstrate that focused He-ion-irradiation can be used to create and guide skyrmions in racetracks.

Electric Field Control of Magnetism in Iron Oxide Nanoporous Thin Films.

Voltage control of the magnetic properties of oxide thin films is highly appealing to enhance energy efficiency in miniaturized spintronic and magnetoelectric devices. Herein, magnetoelectric effects in electrolyte-gated nanoporous iron oxide films are investigated. Highly porous films were prepared by the evaporation-induced self-assembly of sol-gel precursors with a sacrificial block-copolymer template.

Reversible, Electric-Field Induced Magneto-Ionic Control of Magnetism in Mesoporous Cobalt Ferrite Thin Films.

The magnetic properties of mesoporous cobalt ferrite films can be largely tuned by the application of an electric field using a liquid dielectric electrolyte. By applying a negative voltage, the cobalt ferrite becomes reduced, leading to an increase in saturation magnetization of 15% (M) and reduction in coercivity (H) between 5-28%, depending on the voltage applied (-10 V to -50 V). These changes are mainly non-volatile so after removal of -10 V M remains 12% higher (and H 5% smaller) than the pristine sample.

Creation of Magnetic Skyrmion Bubble Lattices by Ultrafast Laser in Ultrathin Films.

Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate controlled generation of skyrmion bubbles and skyrmion bubble lattices from a ferromagnetic state in sputtered ultrathin magnetic films at room temperature by a single ultrafast (35 fs) laser pulse.

Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet.

A novel multi-functional antiferromagnetic coupling layer (MF-AFC) combining Ru and W is revealed to realize an extremely thin (3.8 nm), back-end-of-line compatible as well as magnetically and electrically stable perpendicular synthetic antiferromagnetic layer (pSAF), essential for spintronic memory and logic device applications. In addition to achieving antiferromagnetic RKKY coupling, this MF-AFC also acts as a Boron sink and texture-breaking layer.

Large-Voltage Tuning of Dzyaloshinskii-Moriya Interactions: A Route toward Dynamic Control of Skyrmion Chirality.

Electric control of magnetism is a prerequisite for efficient and low-power spintronic devices. More specifically, in heavy metal-ferromagnet-insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties such as interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films.

Corrigendum: Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures.

This corrects the article DOI: 10.1038/nnano.2015.

The Skyrmion Switch: Turning Magnetic Skyrmion Bubbles on and off with an Electric Field.

Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric field gating, an easily integrable and potentially energetically efficient solution.

Fabrication of nanotweezers and their remote actuation by magnetic fields.

A new kind of nanodevice that acts like tweezers through remote actuation by an external magnetic field is designed. Such device is meant to mechanically grab micrometric objects. The nanotweezers are built by using a top-down approach and are made of two parallelepipedic microelements, at least one of them being magnetic, bound by a flexible nanohinge.

Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions.

We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate the evolution of RKKY coupling with Ru spacer thickness in such a storage layer.

Chiral damping of magnetic domain walls.

Structural symmetry breaking in magnetic materials is responsible for the existence of multiferroics, current-induced spin-orbit torques and some topological magnetic structures. In this Letter we report that the structural inversion asymmetry (SIA) gives rise to a chiral damping mechanism, which is evidenced by measuring the field-driven domain-wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The DW dynamics associated with the chiral damping and those with Dzyaloshinskii-Moriya interaction (DMI) exhibit identical spatial symmetry.

Spin-orbit torque magnetization switching controlled by geometry.

Magnetization reversal by an electric current is essential for future magnetic data storage technology, such as magnetic random access memories. Typically, an electric current is injected into a pillar-shaped magnetic element, and switching relies on the transfer of spin momentum from a ferromagnetic reference layer (an approach known as spin-transfer torque). Recently, an alternative technique has emerged that uses spin-orbit torque (SOT) and allows the magnetization to be reversed without a polarizing layer by transferring angular momentum directly from the crystal lattice.

Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures.

Recent demonstrations of magnetization switching induced by in-plane current injection in heavy metal/ferromagnetic heterostructures have drawn increasing attention to spin torques based on orbital-to-spin momentum transfer. The symmetry, magnitude and origin of spin-orbit torques (SOTs), however, remain a matter of debate. Here we report on the three-dimensional vector measurement of SOTs in AlOx/Co/Pt and MgO/CoFeB/Ta trilayers using harmonic analysis of the anomalous and planar Hall effects.

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection.

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge.

Fast current-induced domain-wall motion controlled by the Rashba effect.

The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s(-1); refs,), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity.

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer.

Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect.