Dopant-Induced Modifications of Ga InP Nanowire-Based p-n Junctions Monolithically Integrated on Si(111).

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to increase the conversion efficiency. Here, we report on the first monolithic integration of Ga InP vertical nanowires, and the associated p-n junctions, on silicon by the Au-free template-assisted selective epitaxy (TASE) method.

Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon.

Additional functionalities on semiconductor microchips are progressively important in order to keep up with the ever-increasing demand for more powerful computational systems. Monolithic III-V integration on Si promises to merge mature Si CMOS processing technology with III-V semiconductors possessing superior material properties, e. g.

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem.

High-Mobility GaSb Nanostructures Cointegrated with InAs on Si.

GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm.

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters.

SiGeSn ternaries are grown on Ge-buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap engineering in the short-wave infrared range of up to about 2.

High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.

Quantum dots in InAs nanowires induced by surface potential fluctuations.

Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic quantum dots, i.e. dots not intentionally defined by electrodes.