SET Kinetics of Ag/HfO-Based Diffusive Memristors under Various Counter-Electrode Materials.

The counter-electrode (CE) material in electrochemical metallization memory (ECM) cells plays a crucial role in the switching process by affecting the reactions at the CE/electrolyte interface. This is due to the different electrocatalytic activity of the CE material towards reduction-oxidation reactions, which determines the metal ion concentration in the electrolyte and ultimately impacts the switching kinetics. In this study, the focus is laid on Pt, TiN, and W, which are relevant in standard chip technology.

Atomically resolved electronic properties in single layer graphene on α-AlO (0001) by chemical vapor deposition.

Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.

Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications.

Functional thin films are commonly integrated in electronic devices as part of a multi-layer architecture. Metal/oxide/metal structures e.g.