Electromagnetically induced transparency allows for the controllable change of absorption properties, which can be exploited in a number of applications including optical quantum memory. In this paper, we present a study of the electromagnetically induced transparency in a Er:LiYF crystal at low magnetic fields and ultra-low temperatures. The experimental measurement scheme employs an optical vector network analysis that provides high precision measurement of amplitude, phase and group delay and paves the way towards full on-chip integration of optical quantum memory setups.
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