Publications by authors named "Stefano Ambrogio"

Analogue memory-based deep neural networks provide energy-efficiency and per-area throughput gains relative to state-of-the-art digital counterparts such as graphics processing units. Recent advances focus largely on hardware-aware algorithmic training and improvements to circuits, architectures, and memory devices. Optimal translation of software-trained weights into analogue hardware weights-given the plethora of complex memory non-idealities-represents an equally important task.

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Recent advances in deep learning have been driven by ever-increasing model sizes, with networks growing to millions or even billions of parameters. Such enormous models call for fast and energy-efficient hardware accelerators. We study the potential of Analog AI accelerators based on Non-Volatile Memory, in particular Phase Change Memory (PCM), for software-equivalent accurate inference of natural language processing applications.

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Artificial intelligence (AI) has the ability of revolutionizing our lives and society in a radical way, by enabling machine learning in the industry, business, health, transportation, and many other fields. The ability to recognize objects, faces, and speech, requires, however, exceptional computational power and time, which is conflicting with the current difficulties in transistor scaling due to physical and architectural limitations. As a result, to accelerate the progress of AI, it is necessary to develop materials, devices, and systems that closely mimic the human brain.

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Hardware accelerators based on two-terminal non-volatile memories (NVMs) can potentially provide competitive speed and accuracy for the training of fully connected deep neural networks (FC-DNNs), with respect to GPUs and other digital accelerators. We recently proposed [S. Ambrogio et al.

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Neural-network training can be slow and energy intensive, owing to the need to transfer the weight data for the network between conventional digital memory chips and processor chips. Analogue non-volatile memory can accelerate the neural-network training algorithm known as backpropagation by performing parallelized multiply-accumulate operations in the analogue domain at the location of the weight data. However, the classification accuracies of such in situ training using non-volatile-memory hardware have generally been less than those of software-based training, owing to insufficient dynamic range and excessive weight-update asymmetry.

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We present a novel one-transistor/one-resistor (1T1R) synapse for neuromorphic networks, based on phase change memory (PCM) technology. The synapse is capable of spike-timing dependent plasticity (STDP), where gradual potentiation relies on set transition, namely crystallization, in the PCM, while depression is achieved via reset or amorphization of a chalcogenide active volume. STDP characteristics are demonstrated by experiments under variable initial conditions and number of pulses.

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Resistive (or memristive) switching devices based on metal oxides find applications in memory, logic and neuromorphic computing systems. Their small area, low power operation, and high functionality meet the challenges of brain-inspired computing aiming at achieving a huge density of active connections (synapses) with low operation power. This work presents a new artificial synapse scheme, consisting of a memristive switch connected to 2 transistors responsible for gating the communication and learning operations.

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