Integration of epitaxial LiNbOthin films with silicon technology.

Development of bulk acoustic wave filters with ultra-wide pass bands and operating at high frequencies for 5and 6generation telecommunication applications and micro-scale actuators, energy harvesters and sensors requires lead-free piezoelectric thin films with high electromechanical coupling and compatible with Si technology. In this paper, the epitaxial growth of 36°Y-X and 30°X-Y LiNbOfilms by direct liquid injection chemical vapour deposition on Si substrates by using epitaxial SrTiOlayers, grown by molecular beam epitaxy, has been demonstrated. The stability of the interfaces and chemical interactions between SrTiO, LiNbOand Si were studied experimentally and by thermodynamical calculations.

Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-Pressure Microcooling Devices.

Silicon-based microchannel technology offers unmatched performance in the cooling of silicon pixel detectors in high-energy physics. Although Si-Si direct bonding, used for the fabrication of cooling plates, also meets the stringent requirements of this application (its high-pressure resistance of ~200 bar, in particular), its use is reported to be a challenging and expensive process. In this study, we evaluated two alternative bonding methods, aiming toward a more cost-effective fabrication process: Si-Glass-Si anodic bonding (AB) with a thin-film glass, and Au-Au thermocompression (TC).