Microscopic study of electrical properties of CrSi2 nanocrystals in silicon.

Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-voltage and capacitance-voltage measurements.

Scanning tip measurement for identification of point defects.

Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties.

Advanced materials nanocharacterization.

This special issue of Nanoscale Research Letters contains scientific contributions presented at the Symposium D "Multidimensional Electrical and Chemical Characterization at the Nanometer-scale of Organic and Inorganic Semiconductors" of the E-MRS Fall Meeting 2010, which was held in Warsaw, Poland from 13th to 17th September, 2010.