Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.

Extending the resolution and spatial proximity of lithographic patterning below critical dimensions of 20 nm remains a key challenge with very-large-scale integration, especially if the persistent scaling of silicon electronic devices is sustained. One approach, which relies upon the directed self-assembly of block copolymers by chemical-epitaxy, is capable of achieving high density 1 : 1 patterning with critical dimensions approaching 5 nm. Herein, we outline an integration-favourable strategy for fabricating high areal density arrays of aligned silicon nanowires by directed self-assembly of a PS-b-PMMA block copolymer nanopatterns with a L(0) (pitch) of 42 nm, on chemically pre-patterned surfaces.

Alignment dynamics of single-walled carbon nanotubes in pulsed ultrahigh magnetic fields.

We have measured the dynamic alignment properties of single-walled carbon nanotube (SWNT) suspensions in pulsed high magnetic fields through linear dichroism spectroscopy. Millisecond-duration pulsed high magnetic fields up to 56 T as well as microsecond-duration pulsed ultrahigh magnetic fields up to 166 T were used. Because of their anisotropic magnetic properties, SWNTs align in an applied magnetic field, and because of their anisotropic optical properties, aligned SWNTs show linear dichroism.

Graphene-metal interface: two-terminal resistance of low-mobility graphene in high magnetic fields.

The two-terminal magnetotransport of a single graphene layer was investigated up to a field of 55 T. The dependence of the electron transmission probability at the organo-metallic interface between the graphene and the metal electrodes was studied as a function of filling factor and electron density. A resistance-plateau spanning several tens of tesla width was observed.