Praseodymium-Doped GeInSbSe Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic Circuits.

In this paper, we report on the infrared luminescence of amorphous praseodymium-doped GeInSbSe waveguides, which can be used as infrared sources in photonic integrated circuits on silicon substrates. Amorphous chalcogenide thin films were deposited by radiofrequency magnetron cosputtering using an argon plasma whose deposition parameters were optimized for chalcogenide materials. The micropatterning as ridge waveguides of the chalcogenide cosputtered films was performed using photolithography and plasma-coupled reactive ion etching techniques.

Watt-level visible laser in double-clad Pr-doped fluoride fiber pumped by a GaN diode.

We report on a red praseodymium fiber laser delivering 1.07 W at 634.5 nm with a slope efficiency of 20.

Watt-level efficient 2.3 µm thulium fluoride fiber laser.

We report on an efficient mid-infrared thulium (Tm) fiber laser operating on the → transition and featuring an upconversion pumping scheme. This laser comprises a heavily -doped (2.50 mol.

Watt-level diode-pumped thulium lasers around 2.3 µm.

We report on efficient diode-pumped mid-infrared lasers based on :, :, and : crystals. These lasers operate in the continuous-wave (CW) regime and deliver watt-level output power at the wavelengths of 2.2-2.

Comparative study of Er-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser deposition.

Despite the renewed interest in rare earth-doped chalcogenide glasses lying mainly in mid-infrared applications, a few comprehensive studies so far have presented the photoluminescence of amorphous chalcogenide films from visible to mid-infrared. This work reports the fabrication of luminescent quaternary sulfide thin films using radio-frequency sputtering and pulsed laser deposition, and the characterization of their chemical composition, morphology, structure, refractive index and Er photoluminescence. The study of ErI level lifetimes enables developing suitable deposition parameters; the dependency of composition, structural and spectroscopic properties on deposition parameters provides a way to tailor the RE-doped thin film properties.

7 to 8 µm emission from Sm doped selenide fibers.

We report on the observation of the long wave-infrared (LWIR) emission centered at 7.3 µm of Sm doped chalcogenide fibers. The chemical composition of the selenide glass host matrix (GaGeSbSe) enables the drawing of 500 ppm and 1000 ppm Sm doped fibers.

Co-doped Dy and Pr GaGeSbS fibers for mid-infrared broad emission.

Rare earth ion doped materials are means to obtain cost-effective infrared light sources, with enough brilliance for applications such as gas sensing. Within a sulfide matrix, the simultaneous luminescence of both Pr and Dy in the GaGeSbS glass is reported. The use of these two rare earths is giving rise to a broad continuous luminescence in the 2.

8 μm luminescence from a Tb GaGeSbSe fiber.

In this Letter, we report for the first time, to the best of our knowledge, on an emission at 8 μm from Tb-doped GaGeSbSe chalcogenide fibers with doping levels at 1000 ppm and 500 ppm. These fibers were drawn following conventional melt-quenching methods and pumped at 2.05 μm using a Tm: YAG laser.

Design of praseodymium-doped chalcogenide micro-disk emitting at 4.7 µm.

A compact amplifier based on chalcogenide Pr-doped micro-disk coupled to two ridge waveguides is designed and refined by means of a home-made computer code. The gain G ≈ 7.9 dB is simulated for a Pr concentration of 10 000 ppm, input signal power of -30 dBm at the wavelength 4.

Novel double step approach for optical sensing via microsphere WGM resonance.

The use of resonant whispering gallery modes (WGMs) for sensing exhibits various drawbacks and critical points related to the microsphere and tapered optical fiber fabrication tolerance. The uncertainty on the fiber taper and microsphere geometry or the gap between the microsphere and the fiber taper can complicate or limit the actual use of these devices for sensing, requiring peculiar calibration of the WGM based sensing set-up. An alternative double-step approach is proposed in this paper.

Green, orange, and red Pr(3+)∶YLiF(4) epitaxial waveguide lasers.

Efficient guided laser oscillation in the visible spectral region is demonstrated with praseodymium-doped YLiF(4) layers grown by liquid phase epitaxy. By exciting Pr(3+) ions at 479.2 nm with an optically pumped semiconductor laser, maximum slope efficiencies of 40% at 639 nm and 32% at 604 nm are obtained in a cw regime.

2.8 W end-pumped Yb3+:LiYF4 waveguide laser.

Continuous wave, room temperature laser oscillation around 1 μm is reported for the first time (to our knowledge) from an Yb(3+)-doped fluoride crystalline waveguide fabricated by using the liquid phase epitaxy technique. Maximum slope efficiencies of 76% and 41% were obtained for laser emissions at 994 and 1020 nm, respectively. A maximum output power of 2.

Red and orange laser operation of Pr:KYF4 pumped by a Nd:YAG/LBO laser at 469.1 nm and a InGaN laser diode at 444 nm.

We report the basic luminescence properties and the continuous-wave (CW) laser operation of a Pr(3+)-doped KYF(4) single crystal in the Red and Orange spectral regions by using a new pumping scheme. The pump source is an especially developed, compact, slightly tunable and intra-cavity frequency-doubled diode-pumped Nd:YAG laser delivering a CW output power up to about 1.4 W around 469.

Red and orange Pr3+:LiYF4 planar waveguide laser.

In this Letter we report on room temperature continuous wave laser operation in the red (639 nm, (3)P(0)→(3)F(2)) and orange (604 nm, (3)P(0)→(3)H(6)) spectral regions of Pr(3+)-doped LiYF(4) planar waveguides fabricated by liquid phase epitaxy. Output powers of 25 and 12 mW and slope efficiencies of 5% and 6% were achieved at 639 and 604 nm, respectively, by pumping with an optically pumped semiconductor laser operating at 479.2 nm.

Tm:LiYF4 planar waveguide laser at 1.9 μm.

Continuous wave laser operation at 1.87 μm of liquid-phase epitaxially (LPE) grown Tm(3+)-doped YLiF(4) (Tm:YLF) layers is demonstrated. The waveguide laser delivers 560 mW by pumping with a Ti:Sapphire laser at 780 nm leading to an efficiency of 76% with respect to the absorbed pump power.