Coulomb Contribution to Shockley-Read-Hall Recombination.

A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center.

Ab Initio Molecular Dynamics Insight to Structural Phase Transition and Thermal Decomposition of InN.

Extensive ab initio density functional theory molecular dynamics calculations were used to evaluate stability conditions for relevant phases of InN. In particular, the p-T conditions of the thermal decomposition of InN and pressure-induced wurtzite-rocksalt solid-solid phase transition were established. The comparison of the simulation results with the available experimental data allowed for a critical evaluation of the capabilities and limitations of the proposed simulation method.

Charge-Controlled Energy Optimization of the Reconstruction of Semiconductor Surfaces: - Transformation of Stoichiometric GaN(0001) Surface to (4 × 4) Pattern.

It was demonstrated by ab initio calculations that energy optimization in the reconstruction of semiconductor surfaces is controlled by the global charge balance. The charge control was discovered during simulations of the influence of heavy doping in the GaN bulk, which changes to ratio in the reconstruction of stoichiometric GaN(0001), i.e.

Polarization Doping in a GaN-InN System-Ab Initio Simulation.

Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope.

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures.

In this paper, we present a comparative analysis of the optical properties of non-polar and polar GaN/AlGaN multi-quantum well (MQW) structures by time-resolved photoluminescence (TRPL) and pressure-dependent studies. The lack of internal electric fields across the non-polar structures results in an improved electron and hole wavefunction overlap with respect to the polar structures. Therefore, the radiative recombination presents shorter decay times, independent of the well width.

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells.

In this paper, ab initio calculations are used to determine polarization difference in zinc blende (ZB), hexagonal (H) and wurtzite (WZ) AlN-GaN and GaN-InN superlattices. It is shown that a polarization difference exists between WZ nitride compounds, while for H and ZB lattices the results are consistent with zero polarization difference. It is therefore proven that the difference in Berry phase spontaneous polarization for bulk nitrides (AlN, GaN and InN) obtained by Bernardini et al.

Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Analysis, Relevance for Crystallization of GaN.

The dissolution of molecular nitrogen in Ga and Fe was investigated by calculations and some complementary experiments. It was found that the N bonding inside these solvents is fundamentally different. For Ga, it is between and and states whereas for Fe this is by to , and states.

Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface.

Thermodynamic foundations of ab initio modeling of vapor-solid and vapor-surface equilibria are introduced. The chemical potential change is divided into enthalpy and entropy terms. The enthalpy path passes through vapor-solid transition at zero temperature.

Dissipation of the excess energy of the adsorbate-thermalization via electron transfer.

A new scenario for the thermalization process of adsorbates at solid surfaces is proposed. The scenario is based on the existence of an electric dipole layer in which the electron wavefunctions extend over the positive ions, creating a strong local electric field which drags the electrons into the solid interior and repels the positive ions. During adsorption the electrons tunnel into the solid interior, conveying the excess energy.

Determination of shear viscosity of molecular nitrogen (N2): molecular dynamic hard rotor methodology and the results.

Determination of shear viscosity of molecular nitrogen (N(2)) by molecular dynamics (MD) in the high density range needs explicit incorporation of the rotational motion and therefore precise knowledge of angular dependence of N(2)-N(2) intermolecular potential. Newly designed Couette flow nonequilibrium molecular dynamic (NEMD) simulation procedure employs corrugated moving boundary, coupling the moving walls to translational and rotational motion exactly. Low density data on nitrogen viscosity show good agreement between MD data and experiment, confirming the radial dependence of the potential derived from quantum mechanical (QM) high precision calculations (coupled-cluster singles-and-doubles with a perturbative triples corrections [CCSD(T)]).

Density functional theory determination of structural and electronic properties of struvite.

Crystallographic structure, total energy, electronic structure, and the most important elastic properties of struvite, NH(4)MgPO(4).6H(2)O, the main component of infectious urinary stones, are presented. The calculations were performed using ab initio full-electron calculations within the density functional theory-generalized gradient approximation (DFT-GGA) framework.

Thermodynamic and kinetic approach in density functional theory studies of microscopic structure of GaN(0001) surface in ammonia-rich conditions.

GaN (0001) surface in an ammonia-rich vapor ambient, typical for ammonia annealing, metalo-organic vapor phase epitaxy (MOVPE) or hydride vapor phase epitaxy (HVPE) was considered. It was shown that, in these three cases, the stationary state of the surface corresponds to condition far from equilibrium. The chemical potential of nitrogen and hydrogen at the surface was determined using kinetic arguments, i.

Molecular nitrogen-N2 properties: the intermolecular potential and the equation of state.

Quantum mechanical (QM) high precision calculations were used to determine N(2)-N(2) intermolecular interaction potential. Using QM numerical data the anisotropic potential energy surface was obtained for all orientations of the pair of the nitrogen molecules in the rotation invariant form. The new N(2)-N(2) potential is in reasonably good agreement with the scaled potential obtained by van der Avoird et al.

Equation of state of nitrogen (N2) at high pressures and high temperatures: molecular dynamics simulation.

Nitrogen equation of state at pressures up to 30 GPa (300 kbars) and temperatures above 800 K was studied by molecular dynamics (MD) simulations. The dynamics of the N(2) molecules is treated in hard rotor approximation, i.e.