Study of Radiation-Induced Defects in -Type SiGe Diodes before and after Annealing.

In this work, electrically active defects of pristine and 5.5 MeV electron irradiated -type silicon-germanium (SiGe)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-DLTS) techniques. The -type SiGe alloys with slightly different Ge contents were examined.

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors.

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in SiGe structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.