Publications by authors named "Srinivasa R Singamaneni"

Article Synopsis
  • The research investigates how manipulating spin-phonon coupling in two-dimensional van der Waals ferromagnetic semiconductors can enhance magnetism, opening new possibilities for spintronic devices.
  • The study uses tetrabutyl ammonium (TBA) as an intercalant to show its effects on the magnetic and electronic properties of CrGeTe, revealing increased ferromagnetic Curie temperature through temperature evolution of Raman modes and magnetization measurements.
  • The findings point to significant electron transfer from TBA to Cr, emphasizing the importance of spin-phonon interaction and magnetic ordering in understanding and controlling magnetism in layered structures.
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The discovery of long-range magnetic ordering in atomically thin materials catapulted the van der Waals (vdW) family of compounds into an unprecedented popularity, leading to potentially important technological applications in magnetic storage and magneto-transport devices, as well as photoelectric sensors. With the potential for the use of vdW materials in space exploration technologies it is critical to understand how the properties of such materials are affected by ionizing proton irradiation. Owing to their robust intra-layer stability and sensitivity to external perturbations, these materials also provide excellent opportunities for studying proton irradiation as a non-destructive tool for controlling their magnetic properties.

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Electron spin polarization is identified as a promising avenue for enhancing the oxygen evolution reaction (OER), which is the bottleneck that limits the energy efficiency of water-splitting. Here, we report that both ferrimagnetic (f-FeO) and superparamagnetic iron oxide (s-FeO) catalysts can exhibit external magnetic field (Hext)-induced OER enhancement, and the activity is proportional to their intrinsic magnetic moment. Additionally, the chirality-induced spin selectivity (CISS) effect was utilized in synergy with Hext to get a maximum enhancement of up to 89% improvement in current density (at 1.

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