Atomic layer deposition of AlO on P2-NaMnCoO as interfacial layer for high power sodium-ion batteries.

Surface modification is one of the impressive and widely used technique to improve the electrochemical performance of sodium-ion batteries by modifying the electrode-electrolyte interface. Herein, we used the atomic layer deposition (ALD) to modify the surface of P2-NaMnCoO by sub-monolayer AlO coating on the prefabricated electrodes. Phase purity is confirmed using various structural and morphological studies.

Solution-Processed ZnCdS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage.

As an alternative buffer material to CdS, ZnCdS buffer layers for vapor transport-deposited SnS thin-film solar cells (TFSCs) were fabricated using the successive ionic layer adsorption and reaction (SILAR) method. Varying the Zn-to-Cd ratio resulted in a series of ZnCdS thin films with controllable band gaps in the range of 2.40-3.

Revealing the Simultaneous Effects of Conductivity and Amorphous Nature of Atomic-Layer-Deposited Double-Anion-Based Zinc Oxysulfide as Superior Anodes in Na-Ion Batteries.

Although sodium-ion batteries (SIBs) are considered promising alternatives to their Li counterparts, they still suffer from challenges like slow kinetics of the sodiation process, large volume change, and inferior cycling stability. On the other hand, the presence of additional reversible conversion reactions makes the metal compounds the preferred anode materials over carbon. However, conductivity and crystallinity of such materials often play the pivotal role in this regard.

Highly Uniform Atomic Layer-Deposited MoS@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for Supercapacitors.

This article takes an effort to establish the potential of atomic layer deposition (ALD) technique toward the field of supercapacitors by preparing molybdenum disulfide (MoS) as its electrode. While molybdenum hexacarbonyl [Mo(CO)] serves as a novel precursor toward the low-temperature synthesis of ALD-grown MoS, HS plasma helps to deposit its polycrystalline phase at 200 °C. Several ex situ characterizations such as X-ray diffractometry (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and so forth are performed in detail to study the as-grown MoS film on a Si/SiO substrate.

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (VO and VO) by Atomic Layer Deposition and Postdeposition Annealing.

Atomic layer deposition was adopted to deposit VO thin films using vanadyl tri-isopropoxide {VO[O(CH)], VTIP} and water (HO) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO. The as-deposited films were found to be amorphous.

Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode.

This article demonstrates the atomic layer deposition (ALD) of tungsten nitride using tungsten hexacarbonyl [W(CO)6] and ammonia [NH3] and its use as a lithium-ion battery anode. In situ quartz crystal microbalance (QCM), ellipsometry and X-ray reflectivity (XRR) measurements are carried out to confirm the self-limiting behaviour of the deposition. A saturated growth rate of ca.