Rapid ultrasensitive and specific BNP biosensor with LED readout.

Biosensing for diagnostics has risen rapidly in popularity over the past decades. With the discovery of new nanomaterials and morphologies, sensitivity is being constantly improved enough for reliable detection of trace biomarkers in human samples, like serum or sweat. This precision has enabled detailed research on the efficacy of biosensors.

Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement.

Use of thinner oxides to improve the operating speed of a complementary metal-oxidesemiconductor (CMOS) device causes serious gate leakage problems. Leakage current of the dielectric analysis method has , , and charge pumping, but the procedure is very complicated. In this premier work, we analyzed the leakage current of metal insulator semiconductor (MIS) capacitors with different initiators through low-frequency noise (LFN) measurement with simplicity and high sensitivity.

Electrical Characterization of Charge Polarity in AlF₃ Anti-Reflection Layers for Complementary Metal Oxide Semiconductor Image Sensors.

In this study, the charge polarity of aluminum fluoride (AlF3) as a function of varying thickness (tAlF3 = 20, 35, 50, 65, and 80 nm) was discussed. AlF3 films were deposited onto p-Si wafers via electron beam sputtering. Thickness dependent charge polarity and reliability issues under bias-temperature stress conditions were identified using a capacitance-voltage (C-V) characterization method.

Investigation of the Charge Balance in Green Phosphorescent Organic Light-Emitting Diodes by Controlling the Mixed Host Emission Layer.

In this paper, we investigated the use of a mixed host emission layer (MH-EML) in green phosphorescent organic light-emitting diodes (OLEDs). The hole transport type (p-type) material (4,4'-Bis(N-carbazolyl)-1,1'-biphenyl (CBP)) and electron transport type (N-type) material (2,2',2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)) were mixed with different ratios. The electrons were easily injected through the lowest unoccupied molecular orbital (LUMO) of TPBi in the mixed host system.

Incorporation of Si and Zr into Pure HfO₂ and Its Effects on Dielectric Integrity.

Hafnium-silicate (HfSiO4, (HfO2)x(SiO2)1-x) and hafnium-zirconate (HfZrO4, (HfO2)x(ZrO2)1-x) films were employed as a gate dielectric to enhance the electrical properties of pure HfO2. (HfO2)x(SiO2)1-x and (HfO2)x(ZrO2)1-x films were formed onto p-Si substrates with varying degrees of Hf content x (x = 1, 0.9, 0.

Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors.

In this study, pulse frequency and reverse bias voltage is modified in charge pumping and advanced technique is presented to extract oxide trap profile in hot carrier stressed thin gate oxide metal oxide semiconductor field effect transistors (MOSFETs). Carrier trapping-detrapping in a gate oxide was analyzed after hot carrier stress and the relationship between trapping depth and frequency was investigated. Hot carrier induced interface traps appears in whole channel area but induced border traps mainly appears in above pinch-off region near drain and gradually decreases toward center of the channel.

Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods.