Efficient promotion of charge transfer and separation in hydrogenated TiO/WO with rich surface-oxygen-vacancies for photodecomposition of gaseous toluene.

Oxygen-deficient TiO/WO constructed via the controllable temperature of hydrogen annealing is designed in view of combining the broad visible spectrum absorption with the prominent coupled semiconductor properties. Surface lattice disorder of TiO/WO arises at hydrogen annealing temperature of 200 and 300°C, while critical phase transition from TiO/WO to TiO/WO occurs at 400°C, both of which can introduce oxygen vacancies. The hydrogenated TiO/WO with rich surface-oxygen-vacancies exhibits much higher photocatalytic activity for decomposition of gaseous toluene than pristine TiO/WO under visible-light illumination (λ>420nm).

Solvothermal syntheses of Bi and Zn co-doped TiO with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light.

This study investigated the effects of Bi doped and Bi-Zn co-doped TiO on photodegradation of gaseous toluene. The doped TiO with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content.